A buried metal-gate field-effect transistor (FET) using a stacked hexagonal boron nitride (h-
BN) and chemically vapor deposited (CVD) graphene heterostructure is demonstrated. A …

Superior electrical transport properties of graphene field-effect transistors (FETs) can be
achieved when graphene is supported by a high-quality hexagonal boron nitride (h-BN) …

We demonstrated graphene interconnects on layered insulator-hexagonal boron nitride (h-
BN). Performance metrics are compared among three material systems: CVD graphene on h …

Two-dimensional atomic sheets of graphene represent a new class of nanoscale materials
with potential applications in electronics. However, exploiting the intrinsic characteristics of …

We investigate key electrical properties of monolayer graphene assembled by chemical
vapor deposition (CVD). Graphene field-effect transistors (GFETs) were fabricated with …

We investigate the transport properties of graphene underneath metal to reveal whether the
carrier density in graphene underneath source/drain electrodes in graphene field-effect …

We report the characterization of high-quality chemical-vapor-deposition (CVD)-grown
graphene devices on CVD-grown hexagonal boron nitride (h-BN). Electrical transport …

Interlayer tunnel field-effect transistors based on graphene and hexagonal boron nitride
(hBN) have recently attracted much interest for their potential as beyond-CMOS devices …

A great challenge is presented when metals have contact with a 2D semiconducting material
because the contact resistances (Rc) induced at the metal‐graphene interfaces hinder the …

The supporting substrate plays a crucial role in preserving the superb electrical
characteristics of an atomically thin 2D carbon system. We explore carrier transport behavior …