We have fabricated vertical-cavity surface-emitting lasers (VCSELs) which, for the first time,
effectively combine a shallow ion implanted aperture, for current confinement under a thin …

Vertical-cavity surface-emitting lasers were invented at the Tokyo Institute of Technology in
1978 [1, 2], and since the late 1980s they have been the subject of research in the United …

We report on GaAs-based high power density vertical-cavity surface-emitting laser diodes
(VCSELs) with ion implanted isolated current apertures. A continuous-wave output power of …

We theoretically investigate the feasibility and potential performance of optically and
electrically pumped vertical-cavity surface-emitting lasers (VCSELs) emitting in the mid-IR …

Vertical-cavity surface-emitting lasers (VCSELs) can be made with active volumes much
smaller than those of conventional edge-emitting laser diodes; however, surface emitters …

We analyze the scaling characteristics of the optical and current confinement for three
different vertical-cavity surface-emitting laser (VCSEL) structures with tapered apertures. The …

Vertical-cavity surface-emitting lasers (VCSELs) have been integrated onto an aluminium
coated silicon substrate. The InGaAs top-emitting VCSELs were grown by molecular beam …

Vertical-cavity surface-emitting lasers (VCSELs) were introduced commercially by
Honeywell in 1996. Since then, they have been used in many practical applications …

In this paper, work is described on the fabrication of highly uniform 8/spl times/8 arrays of
GaAs-AlGaAs vertical-cavity surface-emitting lasers (VCSEL's). Oxide-confined VCSEL …

Oxide-aperture vertical-cavity surface-emitting lasers (VCSELs) have been integrated as
individual device pills within the dielectric stacks of commercially produced silicon integrated …