Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced
negative bend resistance and an anomalous Hall effect, which are a direct consequence of …

We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor
deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are …

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices
exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as …

We report on the fabrication and measurement of nanoscale devices that permit electrostatic
confinement in bilayer graphene on a substrate. The graphene bilayer is sandwiched …

We present electronic transport measurements of single and bilayer graphene on
commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 …

We report high quality graphene and WSe2 devices encapsulated between two hexagonal
boron nitride (hBN) flakes using a pick-up method with etched hBN flakes. Picking up …

The bulk carrier mobility in graphene was shown to be enhanced in graphene–boron nitride
heterostructures. However, nanopatterning graphene can add extra damage and drastically …

We report the study of graphene devices in Hall-bar geometry, gated with a polymer
electrolyte. High densities of 6× 10 13/cm 2 are consistently reached, significantly higher …

Graphene nanoribbons will be essential components in future graphene nanoelectronics.
However, in typical nanoribbons produced from lithographically patterned exfoliated …

Although graphene has the longest mean free path of carriers of any known electronic
material, very few novel devices have been reported to harness this extraordinary property …