A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier
This letter presents a fully integrated 2.4/5.2-GHz dual-band low-noise amplifier (LNA) for
WLAN applications. By switching the input transconductance and the output capacitance …
WLAN applications. By switching the input transconductance and the output capacitance …
8 mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application
A 17/24 GHz dual-band CMOS low-noise amplifier (LNA) for ISM-band application is
presented. The proposed LNA employs a positive feedback transmission-line-based LC …
presented. The proposed LNA employs a positive feedback transmission-line-based LC …
A sub-2 db nf dual-band cmos lna for cdma/wcdma applications
This letter presents the design and experimental results of a 1.8/2.14 GHz dual-band CMOS
low-noise amplifier (LNA), which is usable for code division multiple access and wideband …
low-noise amplifier (LNA), which is usable for code division multiple access and wideband …
A 0.5–11 GHz CMOS low noise amplifier using dual-channel shunt technique
QT Lai, JF Mao - IEEE microwave and wireless components …, 2010 - ieeexplore.ieee.org
A 0.5-11 GHz CMOS low noise amplifier (LNA) is proposed, with a new dual-channel shunt
technique implemented, where one channel uses inductive-series peaking to provide flat …
technique implemented, where one channel uses inductive-series peaking to provide flat …
A 20 MHz–2 GHz inductorless two-fold noise-canceling low-noise amplifier in 28-nm CMOS
A Bozorg, RB Staszewski - … on Circuits and Systems I: Regular …, 2021 - ieeexplore.ieee.org
In this paper, a wideband low-noise amplifier (LNA) with a two-fold noise cancellation
scheme is proposed. Finetuned for advanced CMOS, the proposed LNA architecture uses a …
scheme is proposed. Finetuned for advanced CMOS, the proposed LNA architecture uses a …
A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology
A 24-GHz low-noise amplifier (LNA) was designed and fabricated in a standard 0.18-μm
CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum …
CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum …
A 75.5-to-120.5-GHz, high-gain CMOS low-noise amplifier
DR Lu, YC Hsu, JC Kao, JJ Kuo… - 2012 IEEE/MTT-S …, 2012 - ieeexplore.ieee.org
In this paper, a high-gain and wideband low-noise amplifier using 65-nm CMOS process is
proposed. A four-stage cascode configuration is adopted to achieve the high gain and …
proposed. A four-stage cascode configuration is adopted to achieve the high gain and …
A low-power low-noise amplifier for K-band applications
YL Wei, SSH Hsu, JD Jin - IEEE Microwave and Wireless …, 2009 - ieeexplore.ieee.org
This study presents a high performance K-band low noise amplifier. By utilizing transformer
feedback at the input stage, an excellent noise figure (NF) of 4.3 dB is obtained at 22 GHz …
feedback at the input stage, an excellent noise figure (NF) of 4.3 dB is obtained at 22 GHz …
A 3–8 GHz low-noise CMOS amplifier
A Meaamar, BC Chye, YK Seng - IEEE Microwave and …, 2009 - ieeexplore.ieee.org
A wideband CMOS low-noise amplifier (LNA) is proposed by using the concept of mutual
coupling technique implemented through a symmetric center-tap inductor. A frequency …
coupling technique implemented through a symmetric center-tap inductor. A frequency …
A 21-to-41-GHz high-gain low noise amplifier with triple-coupled technique for multiband wireless applications
Y Yu, J Zhu, Z Zong, P Tang, H Liu… - … on Circuits and …, 2020 - ieeexplore.ieee.org
This brief presents a wideband millimeter-wave (mm-Wave) low noise amplifier (LNA) with a
triple-coupled technique for multiband wireless applications. To enlarge the gain and reduce …
triple-coupled technique for multiband wireless applications. To enlarge the gain and reduce …