A two stage variable-gain low-noise amplifier for X-band in 0.18 µm CMOS

MR Nikbakhsh, E Abiri, H Ghasemian… - Wireless Personal …, 2018 - Springer
In this paper a variable gain low noise amplifier (VG-LNA) is designed and analyzed for X
band in 0.18 µm CMOS technology. A two-stage structure is utilized in the proposed VG-LNA …

A fully integrated low voltage (0.5 V) X‐band CMOS low noise amplifier

B Liu, J Zhou, J Mao - Microwave and Optical Technology …, 2011 - Wiley Online Library
Abstract In this article, a 0.5 VX‐band low noise amplifier (LNA) composed of two common‐
source stages is designed and fabricated with 0.18 um CMOS technology. Based on the …

Low-voltage low-power CMOS RF low noise amplifier

MK Salama, AM Soliman - AEU-International Journal of Electronics and …, 2009 - Elsevier
In this paper, a 1V, 2GHz CMOS low-noise amplifier (LNA) was developed intended for use
in the front-end receiver. The circuit is simulated in standard 0.25 μm CMOS MOSIS. The …

A low-power low-noise amplifier for K-band applications

YL Wei, SSH Hsu, JD Jin - IEEE Microwave and Wireless …, 2009 - ieeexplore.ieee.org
This study presents a high performance K-band low noise amplifier. By utilizing transformer
feedback at the input stage, an excellent noise figure (NF) of 4.3 dB is obtained at 22 GHz …

Two‐stage current‐reused variable‐gain low‐noise amplifier for X‐band receivers in 65 nm complementary metal oxide semiconductor technology

MR Nikbakhsh, E Abiri, H Ghasemian… - IET Circuits, Devices …, 2018 - Wiley Online Library
In this study, a variable gain low noise amplifier (VG‐LNA) working at X band is designed
and simulated in 65 nm complementary metal oxide semiconductor technology. A two‐stage …

A Low Power V-band Low Noise Amplifier Using 0.13-μm CMOS Technology

CY Wu, PH Chen - 2007 14th IEEE International Conference on …, 2007 - ieeexplore.ieee.org
In this paper, a low power V-band low-noise amplifier (LNA) using standard 0.13-um CMOS
technology is proposed and analyzed. In the proposed LNA, three-stage common-source …

Analysis and design of a V-band low-noise amplifier in 90 nm CMOS for 60 GHz applications

Z Yu, J Feng, Y Guo, Z Li - IEICE Electronics Express, 2015 - jstage.jst.go.jp
A V-band low-noise amplifier with the gain boosting and noise reduction technique in 90nm
LP CMOS is implemented and tested in this paper. The operation principles of the two …

Inductorless CMOS low noise amplifier for multiband application in 0.1–1.2 GHz

G Qin, M Jin, G Tu, Y Yan, L Yang, Y Xu… - Transactions of Tianjin …, 2017 - Springer
A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was
designed and implemented in this paper. Current-reuse and self-bias techniques were used …

A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications

Z Hao, L Zhiqun, W Zhigong, Z Li… - Journal of …, 2010 - iopscience.iop.org
This paper presents a variable gain low-noise amplifier (VG-LNA) for 5 GHz applications.
The effect of the input parasitic capacitance on the inductively degenerated common source …

A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18 μm CMOS

K Bao, X Fan, W Li, L Zhang… - Journal of Semiconductors, 2012 - iopscience.iop.org
This paper presents a wideband low noise amplifier (LNA) for multi-standard radio
applications. The low noise characteristic is achieved by the noise-canceling technique …