Ferroelectric memristors have found extensive applications as a type of nonvolatile
resistance switching memories in information storage, neuromorphic computing, and image …

Ferroelectric memristors represent a promising new generation of devices that have a wide
range of applications in memory, digital information processing, and neuromorphic …

Ferroelectric tunnel junction (FTJ) based memristors exhibiting continuous electric field
controllable resistance states have been considered promising candidates for future high …

Memristors with excellent scalability have the potential to revolutionize not only the field of
information storage but also neuromorphic computing. Conventional metal oxides are widely …

Strong interest in resistive switching phenomena is driven by a possibility to develop
electronic devices with novel functional properties not available in conventional systems …

Ferroelectrics have been demonstrated as excellent building blocks for high‐performance
nonvolatile memories, including memristors, which play critical roles in the hardware …

Memristive devices have been extensively demonstrated for applications in nonvolatile
memory, computer logic, and biological synapses. Precise control of the conducting paths …

Advancement of information technology requires low power, high speed, and large capacity
non‐volatile memory. Memristors have potential applications for not only information storage …

Ferroelectric resistive switching memory is a non-destructive and easy to achieve multilevel
storage, which is a breakthrough for further improving the density in the random access …

Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-
volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling …