We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor
deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are …

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced
negative bend resistance and an anomalous Hall effect, which are a direct consequence of …

In this letter, we report the observation of ballistic transport on micron length scales in
graphene synthesised by chemical vapour deposition (CVD). Transport measurements were …

We present electronic transport measurements of single and bilayer graphene on
commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 …

Producing and manipulating graphene on fab-compatible scale, while maintaining its
remarkable carrier mobility, is key to finalize its technological application. We show that a …

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to
graphene device fabrication, but to date such graphene has exhibited lower mobility than …

We report high room-temperature mobility in single-layer graphene grown by chemical
vapor deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) …

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices
exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as …

We measure drift velocity in monolayer graphene encapsulated by hexagonal boron nitride
(hBN), probing its dependence on carrier density and temperature. Due to the high mobility …

Graphene nanoribbons will be essential components in future graphene nanoelectronics.
However, in typical nanoribbons produced from lithographically patterned exfoliated …