Investigation of ScAlN for piezoelectric and ferroelectric applications

R Petrich, H Bartsch, K Tonisch… - … & Exhibition (EMPC), 2019 - ieeexplore.ieee.org
Sc_XAl_-XN is a promising material to expand the application range of nitride materials,
since scandium increases the piezoelectric constants while retaining the crystalline wurtzite …

Towards realizing the low-coercive field operation of sputtered ferroelectric ScxAl1-xN

V Gund, B Davaji, H Lee, J Casamento… - … Conference on Solid …, 2021 - ieeexplore.ieee.org
In this paper, we map the ferroelectric properties of 22% and 30% scandium-doped
aluminum nitride (ScAlN) thin films with the goal to engineer low coercive fields for low …

[HTML][HTML] The impact of argon admixture on the c-axis oriented growth of direct current magnetron sputtered ScxAl1− xN thin films

PM Mayrhofer, C Eisenmenger-Sittner… - Journal of Applied …, 2014 - pubs.aip.org
The piezoelectric properties of wurtzite aluminium nitride (w-AlN) are enhanced by alloying
with scandium (Sc), thus offering superior properties for applications in micro electro …

Structural analysis of sputtered Sc (x) Al (1-x) N layers for sensor applications

B Hähnlein, T Hofmann, K Tonisch… - Key Engineering …, 2020 - Trans Tech Publ
Scandium aluminum nitride (ScxAl1-xN) is a promising material for sensor applications as it
exhibits enhanced piezoelectric properties compared to pristine AlN while maintaining other …

ScxAl1-xN piezoelectric film grown at room temperature

J Liu, L Ma, Y Ma, S Yang, Y Chen… - Journal of Physics …, 2024 - iopscience.iop.org
In order to overcome the shortcomings of AlN piezoelectric thin films such as low
piezoelectric coefficient and low electromechanical coupling coefficientrealize, Sc x Al 1− x …

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1− xN thin films

A Zukauskaite, G Wingqvist, J Palisaitis… - Journal of Applied …, 2012 - pubs.aip.org
Piezoelectric wurtzite Sc x Al 1− x N (x= 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by
reactive magnetron co-sputtering from elemental Sc and Al targets. Al 2 O 3 (0001) wafers …

Aluminum Scandium Nitride as a Functional Material at 1000 {\deg} C

V Gaddam, SS Dabas, J Gao, DJ Spry… - arXiv preprint arXiv …, 2024 - arxiv.org
Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-
temperature applications due to its robust piezoelectric, ferroelectric, and dielectric …

Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices

Q Zhang, M Chen, H Liu, X Zhao, X Qin, F Wang… - Materials, 2021 - mdpi.com
In this work, we systematically studied the deposition, characterization, and crystal structure
modeling of ScAlN thin film. Measurements of the piezoelectric device's relevant material …

Sputter deposition technology for Al(1−x)ScxN films with high Sc concentration

B Heinz, S Mertin, O Rattunde… - 2017 China …, 2017 - ieeexplore.ieee.org
Aluminium scandium nitride (Al 1-x Sc x N) with its strongly enhanced piezoelectric
response is the upcoming piezoelectric material of choice in next generation RF filters …

Effect of scandium content on structure and piezoelectric properties of AlScN films deposited by reactive pulse magnetron sputtering

O Zywitzki, T Modes, S Barth, H Bartzsch… - Surface and Coatings …, 2017 - Elsevier
Al x Sc 1− x N films were deposited by reactive pulse magnetron co-sputtering from
aluminum and scandium targets without additional substrate heating at deposition rates …