The effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is
investigated using inductively coupled plasma reactive ion etching. The native AlN oxide …

Inductively-coupled-plasma reactive ion etching of AlN was investigated using BCl3/Cl2/Ar
gas chemistry. AlN etch rates were studied as a function of substrate bias voltage (− 150 to …

The etching characteristics of aluminum nitride (AlN) were investigated with the etch rate of
AlN thin film and the selectivity of AlN to SiO2 in an inductively coupled Cl2/Ar plasma. The …

The selective etch characteristics of GaN, Al x Ga 1− x N, and In x Ga 1− x N have been
examined in an inductively coupled plasma reactor using Cl 2/Ar/O 2 as the etchant gas …

Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard
processing step for UV and optical photonic devices based on III-nitride materials. There is …

We fabricated an AlN ridge structure using a chlorine-based inductive-coupled plasma
reactive-ion etching (ICP-RIE) and a tetramethylammonium hydroxide (TMAH) solution. The …

We report a comprehensive investigation of inductively-coupled plasma reactive ion etching
(ICP-RIE) of polar (0001) c-plane, semi-polar (11–22) and non-polar (11–20) a-plane AlN …

Reactive ion etching of aluminum using SiCl4 is described and compared with that using
CCl4. In SiCl4 plasmas, a high aluminum etch rate is maintained which is slightly dependent …

AlN etching with chloride plasmas is studied. The experimental results show that the etching
of AlN under a low pressure Cl2/Ar plasma mixture in moderate DC bias is not possible. The …

Reactive ion etching (RIE) of GaN has been performed using BCl3 and additives, Ar and N2,
to BCl3 plasma. The etch rate, surface roughness and the etch profile have been …