A 26 GHz low-noise amplifier in 0.18/spl mu/m CMOS technology
KW Yu, LU Yin-Lung, D Huang… - The 11th IEEE …, 2003 - ieeexplore.ieee.org
A 26 GHz monolithic low-noise amplifier (LNA) is implemented in a standard 0.18/spl mu/m
CMOS technology. Measurements show a gain of 8.9 dB at the peak gain frequency of 25.7 …
CMOS technology. Measurements show a gain of 8.9 dB at the peak gain frequency of 25.7 …
24 GHz low-noise amplifier in 0.18 µm CMOS technology
KW Yu, YL Lu, D Huang, DC Chang, V Liang… - Electronics letters, 2003 - IET
A 24 GHz monolithic low-noise amplifier (LNA) is implemented in a standard 0.18 µm CMOS
technology. Measurements show a gain of 12.86 dB and a noise figure of 5.6 dB at 23.5 …
technology. Measurements show a gain of 12.86 dB and a noise figure of 5.6 dB at 23.5 …
Design of a 6GHz high-gain low noise amplifier
X Tang, F Huang, D Zhao - 2012 international conference on …, 2012 - ieeexplore.ieee.org
This paper presents the design of a low noise amplifier in 0.13-μm CMOS technology. The
conventional inductive degeneration is applied to reduce the noise figure. The amplifying …
conventional inductive degeneration is applied to reduce the noise figure. The amplifying …
2.4 GHz high gain low power narrowband low-noise amplifier (LNA) in 0.18/spl mu/m TSMC CMOS
E Kunz, S Parke - 2004 IEEE Workshop on Microelectronics …, 2004 - ieeexplore.ieee.org
A 2.4 GHz low-noise amplifier has been designed in a standard CMOS 0.18 TSMC process.
The measured noise factor and gain are 1.65 dB and 51dB, respectively, at 2.4 GHz. The …
The measured noise factor and gain are 1.65 dB and 51dB, respectively, at 2.4 GHz. The …
6.5 mW CMOS low noise amplifier at 1.9 GHz
S Yang, R Mason, C Plett - 1999 IEEE International …, 1999 - ieeexplore.ieee.org
A 1.9 GHz low noise amplifier has been designed in a standard CMOS. 35 micron process.
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …
A 1.8 GHz CMOS low-noise amplifier
CJ Debono, F Maloberti… - ICECS 2001. 8th IEEE …, 2001 - ieeexplore.ieee.org
A 1.8 GHz CMOS low-noise amplifier Page 1 A 1.8 GHz CMOS Low-Noise Amplifier Carl
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
A 20 GHz sub-1V low noise amplifier and a resistive mixer in 90 nm CMOS technology
M Bao, H Jacobsson, L Aspemyr… - 2005 Asia-Pacific …, 2005 - ieeexplore.ieee.org
A 20 GHz sub-1 V low noise amplifier and a resistive mixer are designed and fabricated in
90 nm CMOS technology. The LNA achieves a good linearity along with a moderate gain …
90 nm CMOS technology. The LNA achieves a good linearity along with a moderate gain …
Monolithic 40 to 60 GHz LNA
N Camilleri, P Chye, A Lee… - IEEE International Digest …, 1990 - ieeexplore.ieee.org
A monolithic broadband low-noise amplifier (LNA) using MESFET technology has been
demonstrated at U-band. This monolithic chip has demonstrated better than 7-dB gain with …
demonstrated at U-band. This monolithic chip has demonstrated better than 7-dB gain with …
A 2.14 GHz, 0.78 dB noise figure CMOS low noise amplifier
D Pienkowski, R Circa, G Boeck - The European Conference …, 2005 - ieeexplore.ieee.org
This work presents a 2 GHz LNA designed for UMTS mobile terminals. The circuit is
implemented in a 0.13 mum CMOS technology. In design methodology small signal and …
implemented in a 0.13 mum CMOS technology. In design methodology small signal and …
Low DC power monolithic low noise amplifier for wireless applications at 5 GHz
U Lott - IEEE 1996 Microwave and Millimeter-Wave Monolithic …, 1996 - ieeexplore.ieee.org
A two stage monolithic integrated low noise amplifier for applications in the wireless data
frequency range of 5 to 6 GHz has been designed. A noise figure of 3.5 dB with a gain of 15 …
frequency range of 5 to 6 GHz has been designed. A noise figure of 3.5 dB with a gain of 15 …