Design of a 9 GHz CMOS low noise amplifier using gain‐enhanced technique

S Wang - Microwave and Optical Technology Letters, 2011 - Wiley Online Library
In this article, a 9 GHz low noise amplifier (LNA) using gain‐enhanced technique is
presented. The compact and high‐gain LNA with cascode topology is implemented in a …

Design of a 6GHz high-gain low noise amplifier

X Tang, F Huang, D Zhao - 2012 international conference on …, 2012 - ieeexplore.ieee.org
This paper presents the design of a low noise amplifier in 0.13-μm CMOS technology. The
conventional inductive degeneration is applied to reduce the noise figure. The amplifying …

A fully integrated low voltage (0.5 V) X‐band CMOS low noise amplifier

B Liu, J Zhou, J Mao - Microwave and Optical Technology …, 2011 - Wiley Online Library
Abstract In this article, a 0.5 VX‐band low noise amplifier (LNA) composed of two common‐
source stages is designed and fabricated with 0.18 um CMOS technology. Based on the …

A low power 20‐GHz low‐noise amplifier fabricated using 0.18‐μm CMOS technology

JX Liu, HC Kuo, YK Chu, JF Yeh… - Microwave and Optical …, 2009 - Wiley Online Library
A 20‐GHz CMOS low‐noise amplifier (LNA) fabricated with the 0.18 μm process is
presented. This two‐stage cascaded common source LNA exhibits low power consumption …

[PDF][PDF] High gain CMOS low noise amplifier with 2.6 GHz Bandwidth

S Ehrampoosh, A Hakimi - ICComE2010-1 st International …, 2010 - academia.edu
In this paper, a 18 GHz Low Noise Amplifier (LNA) is proposed with using 130 nm
technology. In the designed LNA, the structure of one-stage cascode amplifier with source …

Analysis and design of a V-band low-noise amplifier in 90 nm CMOS for 60 GHz applications

Z Yu, J Feng, Y Guo, Z Li - IEICE Electronics Express, 2015 - jstage.jst.go.jp
A V-band low-noise amplifier with the gain boosting and noise reduction technique in 90nm
LP CMOS is implemented and tested in this paper. The operation principles of the two …

A 30‐GHz 10‐dB low noise amplifier using standard 0.18‐μm CMOS technology

HL Tu, TY Yang, KH Liang… - Microwave and Optical …, 2007 - Wiley Online Library
A three‐stage 30‐GHz low noise amplifier (LNA) was designed and fabricated in a standard
0.18‐μm CMOS technology. The LNA has demonstrated a 10‐dB gain and a minimum noise …

A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology

SC Shin, MD Tsai, RC Liu, KY Lin… - IEEE microwave and …, 2005 - ieeexplore.ieee.org
A 24-GHz low-noise amplifier (LNA) was designed and fabricated in a standard 0.18-μm
CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum …

A 0.5–11 GHz CMOS low noise amplifier using dual-channel shunt technique

QT Lai, JF Mao - IEEE microwave and wireless components …, 2010 - ieeexplore.ieee.org
A 0.5-11 GHz CMOS low noise amplifier (LNA) is proposed, with a new dual-channel shunt
technique implemented, where one channel uses inductive-series peaking to provide flat …

An enhanced low noise amplifier circuit at 6 GHz center frequency and NF improvement in 180 nm CMOS process

F Azizi, G Yosefi - Wireless Personal Communications, 2021 - Springer
This paper presents the design and simulation of a modified CMOS low noise amplifier
(LNA) circuit in 180 nm CMOS standard technology. We modified a cascade LNA using π …