Efficiency droop is currently one of the most popular research problems for GaN-based light-
emitting diodes (LEDs). In this work, a differential carrier lifetime measurement system is …

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current
density perplexes the development of high-power solid-state lighting. Although the relevant …

GaN-based light-emitting diodes (LEDs) exhibit a strong efficiency droop with higher current
injection, which has been mainly attributed to Auger recombination and electron leakage …

In this paper, the self-consistent solution of Schrödinger-Poisson equations was realized to
estimate the radiative recombination coefficient and the lifetime of a single blue light …

The efficiency droop characteristics of single quantum well (SQW) InGaN/GaN light-emitting
diodes (LEDs) including the phase-space filling (PSF) effect are predicted by a three …

Efficiency droop in InGaN light-emitting diodes (LEDs) is analyzed based on the rate
equation model. By using the peak point of the efficiency versus current-density relation as …

A carrier rate model taking carrier delocalization into account is presented to analyze current
dependent internal quantum efficiency of InGaN based light-emitting diodes (LEDs). By …

III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with
increasing injection current (droop). Auger recombination is often seen as primary cause of …

Carrier localization can be modeled as a parameter of reduced effective volumes of the
active region within the efficiency equation to describe efficiency droop of InGaN light …

In InGaN quantum wells (QWs), effective active volume can be greatly reduced due to carrier
localization in In-rich region and inhomogeneous carrier distribution. The authors investigate …