The selective etch characteristics of GaN, Al x Ga 1− x N, and In x Ga 1− x N have been
examined in an inductively coupled plasma reactor using Cl 2/Ar/O 2 as the etchant gas …

A systematic study of the selective etching of GaN over Al 0.28 Ga 0.72 N was performed
using Cl 2/N 2/O 2 inductively coupled plasmas (ICP). Highly selective etching at high GaN …

An alternative method for achieving etching selectivity between GaN and AlN has been
demonstrated. The etch rate of AlN was significantly decreased by the addition of a low …

The etching behavior of gallium nitride (GaN), aluminum gallium nitride (Al x Ga 1− x N), and
aluminum nitride (AlN) has been systematically examined in an inductively coupled plasma …

Selective etching of gallium nitride (GaN) over aluminum gallium nitride (Al x Ga 1-x N) with
inductively coupled plasma and reactive ion etching (RIE) was examined using only chlorine …

This work investigates inductively coupled plasma (ICP) etching processes of GaN. Etching
behaviors are also characterized by varying the ICP power, Cl2/Ar or Cl2/N2 mixing ratio …

Inductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in
CH4/H2/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally …

A systematic study of the etch characteristics of GaN, AlN, and InN has been performed with
boron halide-(BI 3 and BBr 3) and interhalogen-(ICl and IBr) based inductively coupled …

Dry etching of undoped, n-and p-type GaN films was carried out in Cl 2-based inductively
coupled plasmas (ICPs) using different rf excitation frequencies of 100 kHz and 13.56 MHz …

The influence of cathode coverplate material on inductively coupled plasma etching of GaN
and AlGaN with 1% and 10% of Al was investigated. It was revealed that coverplate material …