In this study, a variable gain low noise amplifier (VG‐LNA) working at X band is designed
and simulated in 65 nm complementary metal oxide semiconductor technology. A two‐stage …

In this paper a variable gain low noise amplifier (VG-LNA) is designed and analyzed for X
band in 0.18 µm CMOS technology. A two-stage structure is utilized in the proposed VG-LNA …

A high-gain and wideband low-noise amplifier (LNA) employing a current-reuse technique is
proposed. The current-reuse technique adopted at the first stage yields an exceptionally …

A fully integrated 0.6 V low‐noise amplifier (LNA) for X‐band receiver application based on
0.18 μm RFSOI CMOS technology is presented in this paper. To achieve low noise and high …

A fully integrated low noise amplifier (LNA) suitable for ultra low voltage and ultra low power
applications is proposed and demonstrated in 0.13 μ m CMOS technology. In order to meet …

This paper presents fully integrated ultra-low power CMOS low noise amplifier (LNA) for x-
band space application by employing current reused technique. It also operates in …

Abstract In this article, a 0.5 VX‐band low noise amplifier (LNA) composed of two common‐
source stages is designed and fabricated with 0.18 um CMOS technology. Based on the …

This article presents an on-chip state-adjustable 8 GHz~ 12 GHz low-noise amplifier (LNA).
It has two characteristics. First, an improved current reuse topology is proposed. By …

This paper presents a variable gain low-noise amplifier (VG-LNA) for 5 GHz applications.
The effect of the input parasitic capacitance on the inductively degenerated common source …

AV‐band low‐noise amplifier (LNA) employing a Gm‐boosting technique is presented in this
paper. With the transformers, which are applied between the adjacent stages, the …