Low-voltage complementary electronics from ion-gel-gated vertical van der Waals heterostructures

Y Choi, J Kang, D Jariwala, MS Kang, TJ Marks… - Advanced Materials, 2016 - osti.gov
Graphene has attracted significant attention for high performance electronics due to its
superior electronic and physical properties. Yet, the absence of a band gap and the resulting …

Highly Tunable Carrier Tunneling in Vertical Graphene–WS2–Graphene van der Waals Heterostructures

Z Bai, Y Xiao, Q Luo, M Li, G Peng, Z Zhu, F Luo… - ACS …, 2022 - ACS Publications
Owing to the fascinating properties, the emergence of two-dimensional (2D) materials brings
various important applications of electronic and optoelectronic devices from field-effect …

Large‐Area Schottky Barrier Transistors Based on Vertically Stacked Graphene–Metal Oxide Heterostructures

S Kim, YJ Choi, Y Choi, MS Kang… - Advanced Functional …, 2017 - Wiley Online Library
The fabrication of all‐transparent flexible vertical Schottky barrier (SB) transistors and logic
gates based on graphene–metal oxide–metal heterostructures and ion gel gate dielectrics is …

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

WJ Yu, Z Li, H Zhou, Y Chen, Y Wang, Y Huang… - Nature materials, 2013 - nature.com
Graphene has attracted considerable interest for future electronics, but the absence of a
bandgap limits its direct applicability in transistors and logic devices. Recently, other layered …

Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

X Qin, W Hu, J Yang - Physical Chemistry Chemical Physics, 2019 - pubs.rsc.org
We systematically investigate the effects of external electric field and interlayer coupling on
the electronic structures and contact characteristics of hybrid graphene and tellurene (G/Te) …

Graphene bridge heterostructure devices for negative differential transconductance circuit applications

M Lee, TW Kim, CY Park, K Lee, T Taniguchi… - Nano-Micro Letters, 2023 - Springer
Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have
been widely studied for high-end electronic applications owing to their heterojunction …

Hysteresis‐free hexagonal boron nitride encapsulated 2D semiconductor transistors, NMOS and CMOS inverters

S Liu, K Yuan, X Xu, R Yin, DY Lin, Y Li… - Advanced Electronic …, 2019 - Wiley Online Library
Graphene and subsequently discovered layered semiconducting transition metal
dichalcogenides (TMDCs) exhibit numerous exotic physical properties and broad potential …

Graphene via contact architecture for vertical integration of vdW heterostructure devices

Y Shin, J Kwon, Y Jeong, K Watanabe, T Taniguchi… - Small, 2022 - Wiley Online Library
Abstract Two‐dimensional (2D) devices and their van der Waals (vdW) heterostructures
attract considerable attention owing to their potential for next‐generation logic and memory …

Vertically stacked CVD-grown 2D heterostructure for wafer-scale electronics

S Kim, YC Kim, YJ Choi, HJ Woo, YJ Song… - … applied materials & …, 2019 - ACS Publications
This paper demonstrates, for the first time, wafer-scale graphene/MoS2 heterostructures
prepared by chemical vapor deposition (CVD) and their application in vertical transistors …

Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure

S Wang, JP Chou, C Ren, H Tian, J Yu, C Sun, Y Xu… - Scientific reports, 2019 - nature.com
The structural and electronic properties of van der Waals (vdW) heterostructrue constructed
by graphene and graphene-like germanium carbide were investigated by computations …