Silicon oxide-planarized single-mode 850-nm VCSELs with TO package for 10 Gb/s data transmission

CL Tsai, FM Lee, FY Cheng, MC Wu… - IEEE electron device …, 2005 - ieeexplore.ieee.org
We report on an alternative method to fabricate a high-efficiency planar-type oxide-confined
850-nm vertical-cavity surface-emitting lasers (VCSELs). The planarized process of VCSELs …

Efficient, high-data-rate, tapered oxide-aperture vertical-cavity surface-emitting lasers

YC Chang, LA Coldren - IEEE Journal of Selected Topics in …, 2009 - ieeexplore.ieee.org
New advances in high-efficiency, high-speed 980-nm vertical-cavity surface-emitting lasers
(VCSELs) are presented. The tapered oxide aperture was optimized to provide additional …

High-efficiency, high-speed VCSELs for optical interconnects

YC Chang, LA Coldren - Applied Physics A, 2009 - Springer
Abstract High-efficiency, high-speed, tapered-oxide-apertured vertical-cavity surface-
emitting lasers (VCSELs) emitting at 980ánm have been demonstrated. By carefully …

10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation

FI Lai, TH Hsueh, YH Chang, HC Kuo… - Semiconductor …, 2004 - iopscience.iop.org
High-speed single transverse mode 850 nm vertical cavity surface emitting lasers (VCSELs)
with large emission aperture with a diameter of 8 µm were fabricated. These VCSELs exhibit …

Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime

M Grabherr, R Jager, R Michalzik… - IEEE Photonics …, 1997 - ieeexplore.ieee.org
Single-and multimode vertical-cavity surface-emitting lasers (VCSELs) with three unstrained
GaAs quantum wells (QWs) and emission wavelengths around 850 nm have been …

Small-dimension power-efficient high-speed vertical-cavity surface-emitting lasers

YC Chang, CS Wang, LA Coldren - Electronics Letters, 2007 - IET
Small-dimension power-efficient high-speed oxide-confined 980 nm vertical-cavity surface-
emitting lasers (VCSELs) with record-high bandwidth/power-dissipation ratio of 12.5 …

Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers

N Nishiyama, M Arai, S Shinada… - IEEE Photonics …, 2000 - ieeexplore.ieee.org
We propose a novel vertical-cavity surface emitting laser (VCSEL) with Al (Ga) As multi-
oxide layer (MOX) structure for the purpose of enlarging window aperture maintaining single …

High-performance SiO/sub x/planarized GaInNAs VCSELs

CL Tsai, CW Hu, FM Lee, FY Cheng… - IEEE transactions on …, 2005 - ieeexplore.ieee.org
In this article, we report on an alternative method to fabricate high-efficiency planar-type
oxide-confined 1.3-/spl mu/m vertical-cavity surface-emitting lasers (VCSELs). The …

Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region

Y Qian, ZH Zhu, YH Lo, DL Huffaker, DG Deppe… - Applied physics …, 1997 - pubs.aip.org
We proposed and demonstrated a novel design for long wavelength (1.3 μm) vertical-cavity
surface-emitting lasers (VCSELs). In this design, oxygen-implanted current-confinement …

Energy efficiency of directly modulated oxide-confined high bit rate 850-nm VCSELs for optical interconnects

P Moser, JA Lott, D Bimberg - IEEE Journal of Selected Topics …, 2013 - ieeexplore.ieee.org
The design, fabrication, and performance of the presently most energy-efficient oxide-
confined 850 nm vertical-cavity surface-emitting lasers (VCSELs) for optical interconnects …