A 0.5-V novel complementary current-reused CMOS LNA for 2.4 GHz medical application
R Dai, Y Zheng, J He, G Liu, W Kong, S Zou - Microelectronics journal, 2016 - Elsevier
Abstract A 0.5-V low noise amplifier (LNA) for 2.4 GHz medical application based on 0.18
μm CMOS process is presented in this paper. To achieve low noise and high gain with the …
μm CMOS process is presented in this paper. To achieve low noise and high gain with the …
Design of 0.5 V, 450μW CMOS LNA using current reuse and forward body bias technique
E Kargaran, MM Kazemi - Proceedings of Papers 5th …, 2010 - ieeexplore.ieee.org
An integrated 5 GHz low noise amplifier suitable for ultra low voltage and ultra low power
applications is designed and simulated in a standard 0.18 μm CMOS technology. By …
applications is designed and simulated in a standard 0.18 μm CMOS technology. By …
A fully integrated 5 GHz low-voltage LNA using forward body bias technology
CP Chang, JH Chen, YH Wang - IEEE Microwave and Wireless …, 2009 - ieeexplore.ieee.org
A fully integrated 5 GHz low-voltage and low-power low noise amplifier (LNA) using forward
body bias technology, implemented through a 0.18 mum RF CMOS technology, is …
body bias technology, implemented through a 0.18 mum RF CMOS technology, is …
A 0.4-V low noise amplifier using forward body bias technology for 5 GHz application
D Wu, R Huang, W Wong… - IEEE Microwave and …, 2007 - ieeexplore.ieee.org
A fully integrated low noise amplifier (LNA) suitable for ultra low voltage and ultra low power
applications is proposed and demonstrated in 0.13 μ m CMOS technology. In order to meet …
applications is proposed and demonstrated in 0.13 μ m CMOS technology. In order to meet …
A low-power low-noise amplifier for K-band applications
YL Wei, SSH Hsu, JD Jin - IEEE Microwave and Wireless …, 2009 - ieeexplore.ieee.org
This study presents a high performance K-band low noise amplifier. By utilizing transformer
feedback at the input stage, an excellent noise figure (NF) of 4.3 dB is obtained at 22 GHz …
feedback at the input stage, an excellent noise figure (NF) of 4.3 dB is obtained at 22 GHz …
A low-voltage low-power K-band CMOS LNA using DC-current-path split technology
TP Wang - IEEE microwave and wireless components letters, 2010 - ieeexplore.ieee.org
A low-voltage low-power K-band low-noise amplifier (LNA) using 0.18 μm CMOS technology
is presented in this letter. By splitting the dc current paths, the supply voltage of the LNA is …
is presented in this letter. By splitting the dc current paths, the supply voltage of the LNA is …
Design and analysis of 28 GHz CMOS low power LNA with 6.4 dB gain variability for 5G applications
AA Roobert, PS Arunodhayamary… - Transactions on …, 2022 - Wiley Online Library
A 28 GHz two stage low noise amplifier (LNA) is proposed with envelope detection
technique for power reduction (21.62%) and tunable negative feedback capacitor for gain …
technique for power reduction (21.62%) and tunable negative feedback capacitor for gain …
Design of low power 2.4 GHz CMOS cascode LNA with reduced noise figure for WSN applications
S Manjula, D Selvathi - Wireless personal communications, 2013 - Springer
In this paper, a narrowband cascode Low Noise Amplifier (LNA) with shunt feedback is
proposed. A typical inductively degenerated cascode LNA can be treated as a Common …
proposed. A typical inductively degenerated cascode LNA can be treated as a Common …
Design of a 2.4 GHz CMOS LNA using two-stage forward body bias technique for WSN application
In this paper, a 2.4 GHz CMOS low noise amplifier (LNA) for wireless sensor network (WSN)
application using CMOS 0.13-μm Silterra technology is presented. The proposed design …
application using CMOS 0.13-μm Silterra technology is presented. The proposed design …
Ultra low voltage, ultra low power low noise amplifier for 2 GHz applications
GR Karimi, SB Sedaghat - AEU-International Journal of Electronics and …, 2012 - Elsevier
In this paper, a 0.29 V, 2GHz CMOS low noise amplifier (LNA) intended for ultra low voltage
and ultra low power applications is developed. The circuit is simulated in standard 0.18 μm …
and ultra low power applications is developed. The circuit is simulated in standard 0.18 μm …