A compact wideband CMOS LNA with low power consumption
Y Jang, J Choi - Microwave and Optical Technology Letters, 2012 - Wiley Online Library
In this letter, a wideband low noise amplifier (LNA) operating at 1–5 GHz is proposed. The
circuit is designed with a TSMC 0.18‐μm RF CMOS process. To obtain high …
circuit is designed with a TSMC 0.18‐μm RF CMOS process. To obtain high …
A fully integrated low voltage (0.5 V) X‐band CMOS low noise amplifier
B Liu, J Zhou, J Mao - Microwave and Optical Technology …, 2011 - Wiley Online Library
Abstract In this article, a 0.5 VX‐band low noise amplifier (LNA) composed of two common‐
source stages is designed and fabricated with 0.18 um CMOS technology. Based on the …
source stages is designed and fabricated with 0.18 um CMOS technology. Based on the …
Design and optimization of a 0.5 V CMOS LNA for 2.4-GHz WSN application
L Chen, Z Li - Journal of Semiconductors, 2012 - iopscience.iop.org
This paper presents a low noise amplifier (LNA), which could work at an ultra-low voltage of
0.5 V and was optimized for WSN application using 0.13 μm RF-CMOS technology. The …
0.5 V and was optimized for WSN application using 0.13 μm RF-CMOS technology. The …
A CMOS 3.5 GHz Bandwidth Low Noise Amplifier using Active Inductor
SV Mir-Moghtadaei, F Shirani Bidabadi - AUT Journal of Electrical …, 2025 - eej.aut.ac.ir
This paper presents a 3.5 GHz bandwidth wideband low noise amplifier (LNA) with low
power consumption, high power gain, and acceptable linearity in 130 nm CMOS technology …
power consumption, high power gain, and acceptable linearity in 130 nm CMOS technology …
A 90 nm CMOS wideband low noise amplifier using bandwidth extension technique
A compact 90 nm CMOS wideband low noise amplifier (LNA) adopting bandwidth extension
techniques is presented. The low noise characteristic of the LNA is achieved by the noise …
techniques is presented. The low noise characteristic of the LNA is achieved by the noise …
A W-band CMOS low power wideband low noise amplifier with 22 dB gain and 3dB bandwidth of 20 GHz
CJ Lee, HJ Lee, JG Lee, TH Jang… - 2015 Asia-Pacific …, 2015 - ieeexplore.ieee.org
This paper presents a W-band low power, wideband low noise amplifier design in 65nm
CMOS. Low noise amplifier consists of six-stage to obtain high gain. For a high-data rate …
CMOS. Low noise amplifier consists of six-stage to obtain high gain. For a high-data rate …
Design of an Ultra Low Power CMOS 2.4 GHz LNA
YH Jang, JH Choi - The Journal of Korean Institute of …, 2010 - koreascience.kr
In this paper, we proposed an ultra-low power low noise amplifier (LNA) using a TSMC
0.18${\mu} m $ RF CMOS process. To satisfy the low power consumption with high gain, a …
0.18${\mu} m $ RF CMOS process. To satisfy the low power consumption with high gain, a …
A low‐power V‐band CMOS low‐noise amplifier using current‐sharing technique
HY Yang, YS Lin, C Chen Chen - Microwave and Optical …, 2008 - Wiley Online Library
Abstract A low‐power‐consumption 53‐GHz (V‐band) low‐noise amplifier (LNA) using
standard 0.13 μm CMOS technology is reported. To achieve sufficient gain, this LNA is …
standard 0.13 μm CMOS technology is reported. To achieve sufficient gain, this LNA is …
A 75.5-to-120.5-GHz, high-gain CMOS low-noise amplifier
DR Lu, YC Hsu, JC Kao, JJ Kuo… - 2012 IEEE/MTT-S …, 2012 - ieeexplore.ieee.org
In this paper, a high-gain and wideband low-noise amplifier using 65-nm CMOS process is
proposed. A four-stage cascode configuration is adopted to achieve the high gain and …
proposed. A four-stage cascode configuration is adopted to achieve the high gain and …
A 18–33 GHz CMOS LNA with 26.7 dB peak gain and 2.8 dB minimum NF for K/Ka-band applications
Abstract In the paper, a 18–33 GHz wideband low noise amplifier (LNA) with a T-type
inductive network is proposed. The T-type inductive network generates two dominant poles …
inductive network is proposed. The T-type inductive network generates two dominant poles …