A double-peak structure is observed in the Cu concentration profile after low-energy pulsed-
laser irradiation of Cu-implanted Si. From the Cu surface segregation a primary melt depth is …

Cu-implanted Si crystals were irradiated with Q-switched ruby-laser single pulses. After
irradiation with energy density in excess of 1.0 J/cm 2, the Cu atoms accumulate at the …

Amorphized Si has been irradiated using a 7.5-ns frequency-doubled neodymium: yttrium
aluminum garnet laser. For low energy density pulses, time-resolved reflectivity …

Measurements during pulsed laser irradiation indicate that amorphous Si melts at a
temperature 200±50 K below the crystalline value. Below energy densities required to melt …

It is demonstrated that the thermal conductivity of self-ion-implanted, amorphized silicon is
an order of magnitude less than that of crystalline silicon and is by far the dominant …

We have investigated microstructural changes in self‐implanted and arsenic‐ion‐implanted
amorphous silicon layers as a function of energy density after pulsed ruby laser irradiation …

Bulk nucleation of crystalline Si at a supercooling of 505 K was observed following
pulsedlaser-induced melting of thin films. If the nucleation was homogeneous, the estimated …

Droplets of uncoated molten Si (0.4--0.8 mm diameter) have been undercooled 250 C. Ge
droplets of similar size have been undercooled 280 C in a B20, flux. The observed …

Si amorphized by Cu implantation has been irradiated by spatially uniform pulses of 7.5 ns
duration from a frequency‐doubled neodymium: yttrium aluminum garnet laser. After …

Explosive crystallization of eu implanted amorphous silicon during irradiation by a 32-ns
FWHM ruby laser pulse has been studied using time-resolved reflectivity measurements and …