The etching characteristics of aluminum nitride (AlN) were investigated with the etch rate of
AlN thin film and the selectivity of AlN to SiO2 in an inductively coupled Cl2/Ar plasma. The …

Inductively-coupled-plasma reactive ion etching of AlN was investigated using BCl3/Cl2/Ar
gas chemistry. AlN etch rates were studied as a function of substrate bias voltage (− 150 to …

The effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is
investigated using inductively coupled plasma reactive ion etching. The native AlN oxide …

The selective etch characteristics of GaN, Al x Ga 1− x N, and In x Ga 1− x N have been
examined in an inductively coupled plasma reactor using Cl 2/Ar/O 2 as the etchant gas …

We fabricated an AlN ridge structure using a chlorine-based inductive-coupled plasma
reactive-ion etching (ICP-RIE) and a tetramethylammonium hydroxide (TMAH) solution. The …

The etch characteristics of Ni thin films masked with a photoresist were investigated using
inductively coupled plasma reactive ion etching in a Cl2/Ar gas mix. As the Cl2 …

The plasma produced by the mixture of fluoride and argon (SF6/Ar) was applied for the dry
etching of AlN films. Very high etching rate up to 140nm/min have been observed. The …

Inductively coupled plasma dry etching of epitaxially grown aluminum nitride (AlN) film using
Cl 2/BCl 3/Ar mixture has been investigated. The etch rate of AlN increases significantly with …

In this study, the etching characteristics of ALD deposited Al2O3 thin film in a BCl3/N2
plasma were investigated. The experiments were performed by comparing the etch rates …

In this study, Au thin films were etched with a Cl {sub 2}/Ar gas combination using inductively
coupled plasma. The etch properties were measured for different gas mixing ratios of Cl {sub …