Selective etching of AlInN/GaN heterostructures for MEMS technology
An etching technology for the patterning of suspended GaN structures on lattice matched
AlInN sacrificial layers is studied. Selective dry RIE etching of GaN to AlInN is demonstrated …
AlInN sacrificial layers is studied. Selective dry RIE etching of GaN to AlInN is demonstrated …
Selective wet etching of lattice-matched AlInN–GaN heterostructures
Wet etching of AlInN–GaN epitaxial heterostructures, containing AlInN layers with InN mole
fractions close to 0.17 has been studied. One molar aqueous solution of the chelating amine …
fractions close to 0.17 has been studied. One molar aqueous solution of the chelating amine …
Electrochemical etching of AlGaN for the realization of thin-film devices
Heterogeneously integrated AlGaN epitaxial layers will be essential for future optical and
electrical devices like thin-film flip-chip ultraviolet (UV) light-emitting diodes, UV vertical …
electrical devices like thin-film flip-chip ultraviolet (UV) light-emitting diodes, UV vertical …
Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication
F Niebelschutz, J Pezoldt, T Stauden… - 2008 Conference on …, 2008 - ieeexplore.ieee.org
We present an isotropic fluorine based process to etch 4H-SiC substrates compatible with
standard metallic etch masks and reasonable etching rates. Additionally, a new masking …
standard metallic etch masks and reasonable etching rates. Additionally, a new masking …
Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors
H Maher, DW DiSanto, G Soerensen… - Applied Physics …, 2000 - pubs.aip.org
We characterize a KOH-based ultraviolet UV photoassisted wet etching technique using
K2S2O8 as the oxidizing agent. The solution provides a well-controlled etch rate and …
K2S2O8 as the oxidizing agent. The solution provides a well-controlled etch rate and …
Electrodeless wet etching of GaN assisted with chopped ultraviolet light
ZH Hwang, JM Hwang, HL Hwang, WH Hung - Applied Physics Letters, 2004 - pubs.aip.org
Electrodeless photoelectrochemical (PEC) etching of GaN was studied in a K2S2O8/KOH
solution irradiated with ultraviolet (UV) light either continuously or periodically. The rate of …
solution irradiated with ultraviolet (UV) light either continuously or periodically. The rate of …
Fabrication of GaN suspended microstructures
RP Strittmatter, RA Beach, TC McGill - Applied Physics Letters, 2001 - pubs.aip.org
We report on a versatile processing technology for the fabrication of micro-
electromechanical systems in gallium nitride (GaN). This technology, which is an extension …
electromechanical systems in gallium nitride (GaN). This technology, which is an extension …
Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer
An atomic layer etching (ALE) technique for InAlN/AlN/GaN structure was investigated for the
first time. Different recipes with O 2 modification times of 30–180 s and BCl 3 removal RF …
first time. Different recipes with O 2 modification times of 30–180 s and BCl 3 removal RF …
The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure
This paper studied an atomic layer etching (ALE) technique with a surface treatment function
for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted …
for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted …
Wet etching and its application to the fabrication and characterization of AlGaN/GaN HFETs
H Maher, D DiSanto, G Soerensen… - … 2000 IEEE/Cornell …, 2000 - ieeexplore.ieee.org
We have developed a simple and reproducible UV photo-assisted wet etching process
which can be carried out near room temperature and which does not appreciably degrade …
which can be carried out near room temperature and which does not appreciably degrade …