A 1.8 GHz CMOS low-noise amplifier
CJ Debono, F Maloberti… - ICECS 2001. 8th IEEE …, 2001 - ieeexplore.ieee.org
A 1.8 GHz CMOS low-noise amplifier Page 1 A 1.8 GHz CMOS Low-Noise Amplifier Carl
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
6.5 mW CMOS low noise amplifier at 1.9 GHz
S Yang, R Mason, C Plett - 1999 IEEE International …, 1999 - ieeexplore.ieee.org
A 1.9 GHz low noise amplifier has been designed in a standard CMOS. 35 micron process.
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …
A 1.5-V, 2.4 GHz CMOS low-noise amplifier
A 2.4 GHz low noise amplifier has been designed in a standard CMOS 0.35 um process.
The transistor model is Bsim3 for 0.35 um process. The amplifier provides a forward gain of …
The transistor model is Bsim3 for 0.35 um process. The amplifier provides a forward gain of …
30 GHz CMOS low noise amplifier
E Adabi, B Heydari, M Bohsali… - 2007 IEEE Radio …, 2007 - ieeexplore.ieee.org
30 GHz low noise amplifier was designed and fabricated in a 90nm digital CMOS process.
The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 …
The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 …
A 1. 5 GHz CMOS Low Noise Amplifier
R Fujimoto, S Otaka, H Iwai… - IEICE transactions on …, 1998 - search.ieice.org
A 1. 5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS
technology. The measured associated gain (G a) of the LNA is 13. 8 dB, the minimum noise …
technology. The measured associated gain (G a) of the LNA is 13. 8 dB, the minimum noise …
A 5-25 GHz high linearity, low-noise CMOS amplifier
H Jacobsson, L Aspemyr, M Bao… - 2006 Proceedings of …, 2006 - ieeexplore.ieee.org
A very wide-band amplifier has been designed in a 90 nm CMOS process, utilizing a
common source topology with shunt resistor-inductor feedback. Both input and output return …
common source topology with shunt resistor-inductor feedback. Both input and output return …
13 GHz 4.67 dB NF CMOS low-noise amplifier
The design and measured results of a fully-integrated 13 GHz CMOS low-noise amplifier
(LNA) are presented. Effects of substrate resis-tances on LNA performance are discussed …
(LNA) are presented. Effects of substrate resis-tances on LNA performance are discussed …
A 0.18 μm CMOS 3–5 GHz broadband flat gain low noise amplifier
F Lisong, H Lu, B Xuefei, X Tianzuo - Journal of Semiconductors, 2010 - iopscience.iop.org
A 3–5 GHz broadband flat gain differential low noise amplifier (LNA) is designed for the
impulse radio ultra-wideband (IR-UWB) system. The gain-flatten technique is adopted in this …
impulse radio ultra-wideband (IR-UWB) system. The gain-flatten technique is adopted in this …
2.4 GHz high gain low power narrowband low-noise amplifier (LNA) in 0.18/spl mu/m TSMC CMOS
E Kunz, S Parke - 2004 IEEE Workshop on Microelectronics …, 2004 - ieeexplore.ieee.org
A 2.4 GHz low-noise amplifier has been designed in a standard CMOS 0.18 TSMC process.
The measured noise factor and gain are 1.65 dB and 51dB, respectively, at 2.4 GHz. The …
The measured noise factor and gain are 1.65 dB and 51dB, respectively, at 2.4 GHz. The …
A novel design approach for GHz CMOS low noise amplifiers
X Li, HS Kim, M Ismail, H Olsson - RAWCON 99. 1999 IEEE …, 1999 - ieeexplore.ieee.org
A novel design method for GHz CMOS low noise amplifiers (LNA) is presented. The cascode
LNA is considered as a two-stage amplifier. Considering the high isolation property of the …
LNA is considered as a two-stage amplifier. Considering the high isolation property of the …