The technique of cross-sectional electron microscopy has been used to investigate the
mechanism of electron-beam-induced solid-phase epitaxy of amorphous silicon at room …

Amorphous silicon films with a thickness of 300 nm were deposited on silicon wafers. They
were irradiated on a water-cooled specimen holder by X-rays using synchrotron radiation …

Solid-phase epitaxy of implanted Si is observed at room temperature during in situ electron
irradiation in a Transmission Electron Microscope. Results obtained from irradiation of cross …

The segregation and diffusion of Au are examined during ion-beam-induced solid phase
epitaxial crystallization of Au-implanted amorphous silicon layers. Epitaxy was induced at …

Our recent work on ion-beam-assisted epitaxial growth of amorphous Si layers on single
crystal substrates is reviewed. The planar motion of the crystal-amorphous interface was …

The ion-beam-induced epitaxial crystallization rate of amorphous Si was measured by time-
resolved reflectivity on crystal substrates with orientations every 5 from (100) to (111) to …

The epitaxial recrystallization of amorphous electron beam deposited silicon and
silicongermanium layers on (100) silicon substrates was induced by a 2.5 MeV Ar beam …

It is shown that epitaxial crystallisation of amorphous silicon layers can be induced by
irradiating samples with energetic light ions at temperatures in the range 673–723 K. This …

Abstract Bombardment with 0.6-3-MeV Ne+ ions has been employed to stimulate solid-
phase epitaxial growth of amorphous silicon at temperatures 200-500 C. Two distinctly …

Epitaxial regrowth of an amorphous Si layer on a< 100> Si crystal held at 200–400° C is
achieved under bombardment with Si, Kr, or Xe ions. Channeling measurements with MeV …