This study presents a high performance K-band low noise amplifier. By utilizing transformer
feedback at the input stage, an excellent noise figure (NF) of 4.3 dB is obtained at 22 GHz …

A low-voltage low-power K-band low-noise amplifier (LNA) using 0.18 μm CMOS technology
is presented in this letter. By splitting the dc current paths, the supply voltage of the LNA is …

In this paper, a 0.29 V, 2GHz CMOS low noise amplifier (LNA) intended for ultra low voltage
and ultra low power applications is developed. The circuit is simulated in standard 0.18 μm …

A 0.5-11 GHz CMOS low noise amplifier (LNA) is proposed, with a new dual-channel shunt
technique implemented, where one channel uses inductive-series peaking to provide flat …

Two K-Band low-noise amplifiers (LNAs) are designed and implemented in a standard 0.18
μm CMOS technology. The 24 GHz LNA has demonstrated a 12.86 dB gain and a 5.6 dB …

In this paper, a high-gain and wideband low-noise amplifier using 65-nm CMOS process is
proposed. A four-stage cascode configuration is adopted to achieve the high gain and …

A low power and high gain V-band CMOS low-noise amplifier (LNA) is proposed in this letter
with a three-stage cascode topology. Using the gate-inductive gain-peaking technique to …

This brief proposes a broadband noise-cancelling (NC) common-gate (CG)-common-source
(CS) low-noise amplifier (LNA) with a passive network to improve the gain and noise …

A 24-GHz low-noise amplifier (LNA) was designed and fabricated in a standard 0.18-μm
CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum …

This article proposes a novel wideband common-gate (CG) common-source (CS) low-noise
amplifier (LNA) with active feedforward for simultaneous current and noise reduction. By …