A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS2 and WSe2
heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the …

Van der Waals (vdWs) heterostructures enable the fabrication of various optoelectronic
devices with unprecedented functionalities, particularly antiambipolar transistors. Different …

Reconfigurable logic circuits implemented by two-dimensional (2D) ambipolar
semiconductors provide a prospective solution for the post-Moore era. It is still a challenge …

Ambipolar dual-gate transistors based on low-dimensional materials, such as graphene,
carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs) …

Two-dimensional (2D) materials and their related van der Waals heterostructures have
attracted considerable interest for their fascinating new properties. There are still many …

Backward diodes conduct more efficiently in the reverse bias than in the forward bias,
providing superior high-frequency response, temperature stability, radiation hardness, and …

Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the
intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a …

Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on
asymmetric heterostructures, which are challenging to fabricate. AATs used for …

Complementary circuits based on 2D materials show great promise for next‐generation
electronics. An ambipolar all‐2D ReSe2 field‐effect transistor (FET) with a hexagonal boron …

Antiambipolar transistors (AATs) have attracted enormous attention in recent years due to
their potential application to multivalued logic circuits (MVLs). A wide variety of materials …