We have studied the epitaxy of few-layer hexagonal boron nitride (h-BN) by plasma-assisted
molecular beam epitaxy (MBE) using a low growth rate and nitrogen-rich condition. It has …

The growth and properties of hexagonal boron nitride (hBN) have recently attracted much
attention due to applications in graphene-based monolayer thick two dimensional (2D) …

This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on
sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented lattice and …

Hexagonal boron nitride (hBN) has attracted a great deal of attention as a key component in
van der Waals (vdW) heterostructures, and as a wide band gap material for deep-ultraviolet …

Hexagonal boron nitride (h-BN) has a potential for optical device applications in the deep
ultraviolet spectral region. For several decades, only amorphous and turbostratic boron …

Hexagonal boron nitride (h-BN) is considered as one of the most promising materials for
next-generation quantum technologies. In this paper, we report bulk-like multilayer h-BN …

Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …

As an emerging 2D ultrawide bandgap semiconductor, hexagonal boron nitride (h‐BN) is
gaining significant attention for its superior properties and wide applications. Although …

Wide-band-gap layered semiconductor hexagonal boron nitride (h-BN) is attracting intense
interest due to its unique optoelectronic properties and versatile applications in deep …

We examine the effects of stacking sequence and number of layers on the electronic and
luminescence properties of hexagonal boron nitride (h-BN) structures with first-principles …