A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are
some of the outstanding properties that have made Sc x Al 1− x N a promising material in …

Abstract Scandium Aluminum Nitride thin films (Sc x Al 1-x N) are attracting more and more
attention for micro-electromechanical systems (MEMS) because of significantly increased …

We report on the anisotropic wet etching of sputtered AlN and Sc 0.2 Al 0.8 N thin films. With
tetramethyl ammonium hydroxide at 80° C, the etch rates along the c-axis were 330 and 30 …

Aluminum nitride (AlN) is a technologically relevant material that can be deposited at low
temperatures in the form of thin-films while preserving most of its physical properties …

We investigate the inductively coupled plasma (ICP) etching characteristics of (0002)
Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al 0.94 Sc 0.06 N) piezoelectric …

A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin
films that is attractive for applications with a limited temperature budget is presented …

The piezoelectric properties of wurtzite aluminium nitride (w-AlN) are enhanced by alloying
with scandium (Sc), thus offering superior properties for applications in micro electro …

We summarize the recipes and describe the role of sputtering parameters in producing
highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is …

In this work, we present a method for growing highly c-axis oriented aluminum scandium
nitride (AlScN) thin films on (100) silicon (Si), silicon dioxide (SiO2) and epitaxial polysilicon …

Atomic layer deposition (ALD) of silicon nitride (SiN x) is deemed essential for a variety of
applications in nanoelectronics, such as gate spacer layers in transistors. In this work an …