The field of graphene research has developed rapidly since its first isolation by mechanical
exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both …

Graphene has demonstrated great promise for future electronics technology as well as
fundamental physics applications because of its linear energy–momentum dispersion …

The use of boron nitride (BN) as a substrate for graphene nanodevices has attracted much
interest since the recent report that BN greatly improves the mobility of charge carriers in …

We present electronic transport measurements of single and bilayer graphene on
commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 …

We report on the fabrication and measurement of a graphene tunnel junction using
hexagonal-boron nitride as a tunnel barrier between graphene and a metal gate. The …

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices
exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as …

After graphene emerged as a material with the potential to supplant silicon in future
electronic devices because of its superior electronic properties, there has been a flurry of …

Low temperature pulsed laser deposited (PLD) ultrathin boron nitride (BN) on SiO2 was
investigated as a dielectric for graphene electronics, and a significant enhancement in …

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced
negative bend resistance and an anomalous Hall effect, which are a direct consequence of …

We use scanning tunneling microscopy and X-ray spectroscopy to characterize the atomic
and electronic structure of boron-doped and nitrogen-doped graphene created by chemical …