Defect-assisted contact property enhancement in a molybdenum disulfide monolayer
Contact engineering for two-dimensional (2D) transition metal dichalcogenides (TMDCs) is
crucial for realizing high-performance 2D TMDC devices, and most studies on contact …
crucial for realizing high-performance 2D TMDC devices, and most studies on contact …
Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors
Two-dimensional transition metal dichalcogenides (TMDCs) have emerged as promising
materials for next-generation electronics due to their excellent semiconducting properties …
materials for next-generation electronics due to their excellent semiconducting properties …
[HTML][HTML] Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs)
have been widely isolated, synthesized, and characterized recently. Numerous 2D materials …
have been widely isolated, synthesized, and characterized recently. Numerous 2D materials …
Investigation on Contact Properties of 2D van der Waals Semimetallic 1T-TiS2/MoS2 Heterojunctions
Two-dimensional transition metal dichalcogenides (2D TMDCs) are considered promising
alternatives to Si as channel materials because of the possibility of retaining their superior …
alternatives to Si as channel materials because of the possibility of retaining their superior …
Improved electrical contact to multilayer MoS2-based field-effect transistor by tunable tellurium substitutional doping via MOCVD
Electrical metal contacts with two-dimensional transition metal dichalcogenides (2D TMDs)-
based field-effect transistors (FETs) remain a critical challenge because of their high contact …
based field-effect transistors (FETs) remain a critical challenge because of their high contact …
Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry
We demonstrate how substrate interfacial chemistry can be utilized to tailor the physical
properties of single-crystalline molybdenum disulfide (MoS2) atomic-layers …
properties of single-crystalline molybdenum disulfide (MoS2) atomic-layers …
Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS2
High contact resistance of transition-metal dichalcogenide (TMD)-based devices is one of
the bottlenecks that limit the application of TMDs in various domains. Contact resistance of …
the bottlenecks that limit the application of TMDs in various domains. Contact resistance of …
Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition
Molybdenum disulfide (MoS 2), a semiconducting two-dimensional layered transition metal
dichalcogenide (2D TMDC), with attractive properties enables the opening of a new …
dichalcogenide (2D TMDC), with attractive properties enables the opening of a new …
Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts
Contact engineering on monolayer layer (ML) semiconducting transition metal
dichalcogenides (TMDs) is considered the most challenging problem toward using these …
dichalcogenides (TMDs) is considered the most challenging problem toward using these …
Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides
Electrical metal contacts to two-dimensional (2D) semiconducting transition metal
dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device …
dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device …