Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

W Wang, W Wang, Y Meng, Q Quan, Z Lai, D Li, P Xie… - ACS …, 2022 - ACS Publications
The incapability of modulating the photoresponse of assembled heterostructure devices has
remained a challenge for the development of optoelectronics with multifunctionality. Here, a …

Gate-Tunable Photodetectors Based on Anti-Ambipolar Transistors Composed of Black Phosphorus/MoS2 Nanosheet Heterostructures

B Su, X Zhang, R Luo, X Chen, J Tian… - ACS Applied Nano …, 2023 - ACS Publications
Anti-ambipolar transistors (AATs) based on two-dimensional (2D) van der Waals
heterostructures are frequently studied to create multivalued logic circuits. However, the anti …

Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors

E Wu, Y Xie, Q Liu, X Hu, J Liu, D Zhang, C Zhou - ACS nano, 2019 - ACS Publications
van der Waals (vdW) p–n heterojunctions formed by two-dimensional nanomaterials exhibit
many physical properties and deliver functionalities to enable future electronic and …

Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

H Han, B Zhang, Z Zhang, Y Wang, C Liu, AK Singh… - Nano Letters, 2024 - ACS Publications
Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on
asymmetric heterostructures, which are challenging to fabricate. AATs used for …

High-Performance Broadband Floating-Base Bipolar Phototransistor Based on WSe2/BP/MoS2 Heterostructure

H Li, L Ye, J Xu - Acs Photonics, 2017 - ACS Publications
Recently, there are increasing interests in two-dimensional materials, as a result of their
outstanding electrical and optical properties and numerous potential applications in …

High-Performance Ultraviolet to Near-Infrared Antiambipolar Photodetectors Based on 1D CdSxSe1–x/2D Te Heterojunction

S Liu, L Zhang, B Ma, X Zeng, Y Liu, Z Ma… - … Applied Materials & …, 2024 - ACS Publications
Antiambipolar heterojunctions are regarded as a revolutionary technology in the fields of
electronics and optoelectronics, enabling the switch between positive and negative …

Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure toward a Self-Driven Photodetector and Complementary Logic Circuits

W Hu, H Wang, J Dong, H Sun, Y Wang… - … Applied Materials & …, 2023 - ACS Publications
Two-dimensional (2D) van der Waals heterostructures based on transition metal
dichalcogenides are expected to be unique building blocks for next-generation nanoscale …

Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

SG Kim, SH Kim, J Park, GS Kim, JH Park… - ACS …, 2019 - ACS Publications
Layered two-dimensional (2D) materials have entered the spotlight as promising channel
materials for future optoelectronic devices owing to their excellent electrical and …

Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p–n vdW Heterostructure

S Yang, C Wang, C Ataca, Y Li, H Chen… - … applied materials & …, 2016 - ACS Publications
Heterostructure engineering of atomically thin two-dimensional materials offers an exciting
opportunity to fabricate atomically sharp interfaces for highly tunable electronic and …

Multifunctional anti-ambipolar pn junction based on MoTe2/MoS2 heterostructure

R Hu, E Wu, Y Xie, J Liu - Applied Physics Letters, 2019 - pubs.aip.org
The discovery of atomically thin two-dimensional materials enables building numerous van
der Waals heterostructures with original and promising properties for potential electronic …