Nickel (Ni) and its alloys are important multifunctional materials for the fabrication of
integrated circuits, as either the absorber for the extreme ultraviolet lithography masks …

A two-step plasma-thermal atomic layer etching (ALE) process that is capable of etching Ni
with high selectivity with respect to the SiO 2 hard mask and high anisotropy is evaluated in …

Surface oxide formation inhibiting the etch of a tantalum nitride (TaN) film was controlled
through step pressure modulation and H 2 addition in a Cl 2/Ar based plasma-assisted …

We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using
sequential exposures of SF 6 plasma and trimethylaluminum [Al (CH 3) 3]. ALE was …

The stringent requirement for patterning highly absorbing metal thin films as a mask for the
next-generation extreme ultra-violet lithography system dictates the development of an …

Thermal atomic layer etching (ALE) is a promising method for isotropic etching with atomic
level precision and high conformality over three-dimensional structures. In this study, a …

Atomic layer etching (ALE) is a promising technique that can solve the challenges
associated with continuous or pulsed plasma processes—trade-offs between selectivity …

Plasma atomic layer etching is a dry etching process using a dose step to modify a material's
surface chemistry and an etch step to remove the modified surface layer. This method of …

In this work, a special focus is given to atomic layer etching (ALE) of metals, since this is a
relatively new field but is expected to grow rapidly given the major advancements potentially …

Abstract Properties such as wide bandgap, higher electromechanical coupling, and low
dielectric permittivity have propelled Sc x Al1− x N as an advantageous material for …