High-Performance Wideband Low-Noise Amplifier Using Enhanced -Match Input Network
YS Lin, CC Wang, GL Lee… - IEEE Microwave and …, 2014 - ieeexplore.ieee.org
A low noise-figure (NF) and high power gain (S21) 3~ 10 GHz ultra-wideband low-noise
amplifier (UWB LNA) with excellent phase linearity using 0.18 μm CMOS technology is …
amplifier (UWB LNA) with excellent phase linearity using 0.18 μm CMOS technology is …
A CMOS 3–12-GHz ultrawideband low noise amplifier by dual-resonance network
N Li, W Feng, X Li - IEEE Microwave and Wireless …, 2017 - ieeexplore.ieee.org
A low-power and high power-gain (S 21) ultrawideband low noise amplifier (UWB LNA) with
flat noise figure (NF) based on Global Foundies 0.13-μm CMOS technology is reported. The …
flat noise figure (NF) based on Global Foundies 0.13-μm CMOS technology is reported. The …
A 2.87±0.19 dB NF 3.1∼ 10.6 GHz ultra-wideband low-noise amplifier using 0.18 µm CMOS technology
CH Wu, YS Lin, JH Lee… - 2012 IEEE Radio and …, 2012 - ieeexplore.ieee.org
A 3.1~ 10.6 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase
linearity property (group-delay variation is only±15.8 ps across the whole band) using …
linearity property (group-delay variation is only±15.8 ps across the whole band) using …
A 3.1–10.6‐GHz current‐reused CMOS ultra‐wideband low‐noise amplifier using self‐forward body bias and forward combining techniques
CH Wu, YS Lin, CC Wang - Microwave and Optical Technology …, 2013 - Wiley Online Library
ABSTRACT A 3.1–10.6‐GHz ultra‐wideband low‐noise amplifier (UWB LNA) with excellent
phase linearity property (group‐delay variation is only±19.46 ps across the whole band) …
phase linearity property (group‐delay variation is only±19.46 ps across the whole band) …
A 18–44 GHz low noise amplifier with input matching and bandwidth extension techniques
R Wang, C Li, J Zhang, S Yin, W Zhu… - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
This letter presents a low noise amplifier (LNA) with a 3-dB gain bandwidth (3-dB BW) of 18–
44 GHz in 65-nm CMOS technology. By deriving an analytical equation of input impedance …
44 GHz in 65-nm CMOS technology. By deriving an analytical equation of input impedance …
A compact wideband CMOS low-noise amplifier using shunt resistive-feedback and series inductive-peaking techniques
HK Chen, DC Chang, YZ Juang… - IEEE Microwave and …, 2007 - ieeexplore.ieee.org
A wideband low-noise amplifier (LNA) with shunt resistive-feedback and series inductive-
peaking is proposed for wideband input matching, broadband power gain and flat noise …
peaking is proposed for wideband input matching, broadband power gain and flat noise …
A new CMOS wideband low noise amplifier with gain control
In this paper, a new CMOS wideband low noise amplifier (LNA) is proposed that is operated
within a range of 470MHz–3GHz with current reuse, mirror bias and a source inductive …
within a range of 470MHz–3GHz with current reuse, mirror bias and a source inductive …
2.5 dB NF 3.1–10.6 GHz CMOS UWB LNA with small group-delay variation
HY Yang, YS Lin, CC Chen - Electronics Letters, 2008 - IET
A 3.1–10.6 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase
linearity property (group-delay variation is only±16.7 ps across the whole band) using …
linearity property (group-delay variation is only±16.7 ps across the whole band) using …
A 115.7–139.7 GHz Amplifier with 19.7 dB Peak Gain and 7.9 dB NF in 40-nm CMOS
A 115.7–139.7 GHz low noise amplifier (LNA) is presented. The neutralization capacitance
is chosen to minimize the tradeoff between the achievable gain and noise figure. Based on …
is chosen to minimize the tradeoff between the achievable gain and noise figure. Based on …
An Ultra-Low-Power 24 GHz Low-Noise Amplifier Using 0.13 CMOS Technology
This study presents an ultra-low-power 24 GHz low-noise amplifier (LNA) using 0.13 μm
CMOS technology. We propose of using the minimum noise measure (M MIN) as the …
CMOS technology. We propose of using the minimum noise measure (M MIN) as the …