Electrical Polarity Modulation in V‐Doped Monolayer WS2 for Homogeneous CMOS Inverters
As demand for higher integration density and smaller devices grows, silicon‐based
complementary metal‐oxide‐semiconductor (CMOS) devices will soon reach their ultimate …
complementary metal‐oxide‐semiconductor (CMOS) devices will soon reach their ultimate …
Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides through Substitutional Vanadium Doping
L Zhang, Z Wang, J Zhang, B Chen… - Advanced Functional …, 2022 - Wiley Online Library
Semiconducting 2D transition metal dichalcogenides (2D TMDs) with tunable electronic
properties are a fundamental prerequisite for the development of next generation advanced …
properties are a fundamental prerequisite for the development of next generation advanced …
Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment
We present a method for substitutional p-type doping in monolayer (1L) and few-layer (FL)
WS2 using highly reactive nitrogen atoms. We demonstrate that the nitrogen-induced lattice …
WS2 using highly reactive nitrogen atoms. We demonstrate that the nitrogen-induced lattice …
Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide
T Das, S Youn, JE Seo, E Yang… - ACS Applied Materials & …, 2023 - ACS Publications
Achieving effective polarity control of n-and p-type transistors based on two-dimensional
(2D) materials is a critical challenge in the process of integrating transition metal …
(2D) materials is a critical challenge in the process of integrating transition metal …
Efficient doping modulation of monolayer WS2 for optoelectronic applications
Transition metal dichalcogenides (TMDCs) belong to a subgroup of two-dimensional (2D)
materials which usually possess thickness-dependent band structures and semiconducting …
materials which usually possess thickness-dependent band structures and semiconducting …
Transition-Metal Substitution-Induced Lattice Strain and Electrical Polarity Reversal in Monolayer WS2
The physical and chemical properties of transition metal dichalcogenides can be effectively
tuned by doping or alloying, which is essential for their practical applications. However, the …
tuned by doping or alloying, which is essential for their practical applications. However, the …
High-Performance WS2 MOSFETs with Bilayer WS2 Contacts
WS2 is a promising transition-metal dichalcogenide (TMDC) for use as a channel material in
extreme-scaled metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its …
extreme-scaled metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its …
CVD synthesis of Mo (1− x) W x S 2 and MoS 2 (1− x) Se 2x alloy monolayers aimed at tuning the bandgap of molybdenum disulfide
As a rising star in two-dimensional (2D) layered materials, transition metal dichalcogenides
(TMDs) have attracted tremendous attention for their potential applications in …
(TMDs) have attracted tremendous attention for their potential applications in …
Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid-Phase Precursor-Assisted Synthesis
Doping lies at the heart of modern semiconductor technologies. Therefore, for two-
dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), the significance …
dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), the significance …
Highly Oriented WS2 Monolayers for High‐Performance Electronics
L Zhan, X Pei, J Tang, S Li, S Li, Y Li, L Li, C Wan… - Advanced … - Wiley Online Library
Abstract 2D transition‐metal dichalcogenide (TMDC) semiconductors represent the most
promising channel materials for post‐silicon microelectronics due to their unique structure …
promising channel materials for post‐silicon microelectronics due to their unique structure …