Among potential candidates to replace the CMOS transistor channel, several materials such
as CNTs, GNRs, and SiNW show an interesting behavior known as “Ambipolarity.” …

In this work, we present a review of recent logic circuit design research using ambipolar
independent double gate field effect transistors (Am-ICDGFETs). In a first approach, we …

In this letter, we report on the fabrication and characterization of ambipolar silicon-nanowire
(SiNW) field-effect transistors (FETs) with a double-independent-gate (DIG) structure for …

Transistors are the fundamental elements in Integrated Circuits (IC). The development of
transistors significantly improves the circuit performance. Numerous technology innovations …

Recently, unique novel characteristics of ambipolar transistors have been explored in
various forms on both device and cell level. Most of these so called reconfigurable or polarity …

As the physical scaling limit of silicon-based integrated circuits is approached, new materials
and device structures become necessary. The exclusive-OR (XOR) gate is a basic logic gate …

Current through ambipolar carbon nanotube field-effect transistors (CNTFETs) can be
controlled by two independent gates, enabling highly expressive XOR-based logic circuits …

The application of artificial intelligence (AI) requires advanced computation to address
complex problems. However, the improvement of binary computing systems supporting …

Reconfigurable silicon nanowire field-effect transistors (RFETs) combine the functionality of
classical unipolar p-type and n-type FETs in one universal device. In this paper, we show …

In this work, we have presented a physics-based analytical SET model for hybrid SET-
CMOS circuit simulations. A realistic SET modeling approach has been used to provide a …