Interface issues with organic semiconductors on metal oxide challenge realizing a high‐
performance anti‐ambipolar transistor (AAT) with stable operation. The motivation behind …

Antiambipolar current is an enabling feature for a wide range of unconventional devices. At
the same time, it still remains as a new phenomenon without sufficiently deep …

This paper briefly reviews recent progress in antiambipolar transistor (AAT) development. A
variety of semiconducting materials, such as two-dimensional (2D) atomic layers, carbon …

The key concept behind this study is the use of “geometry engineering” to elucidate the
carrier transport path and to control the device properties of organic antiambipolar …

An antiambipolar transistor exhibits a steep increase and decrease in drain current within a
certain range of gate bias voltage. This unique feature is brought about by a partially stacked …

Organic antiambipolar transistors (AATs) have partially overlapped p–n junctions. At room
temperature, this p–n junction induces a negative differential transconductance in an AAT …

An antiambipolar transistor (AAT) exhibits a negative differential transconductance (NDT)
due to a partially overlapped p–n junction formed in the transistor channel. However, the …

We report on the magnetoresistance (MR) effect in a unipolar p-channel field-effect transistor
based on amorphous thin film of low molecular weight 2, 2′, 7, 7′-tetrakis (diphenylamino) …

Ambipolar field-effect transistors (FETs) based on solution-processed organic-inorganic
bilayer structures were investigated. An amorphous indium oxide (InO x) film, as the n-type …

Anti‐ambipolar transistors (AATs) featuring heterojunctions of n‐and p‐type semiconductors
have garnered significant research interest owing to their unique electrical characteristics …