Hybrid bonding is key to achieving high-quality interconnect interfaces for fine pitch
integration. It has an advantage over other types of interconnects as it allows a high I/O …

Achieving high-quality interconnect interfaces for fine pitch integration is crucial in today's
advanced electronic systems. Among various interconnect options, hybrid bonding stands …

This study presents groundbreaking outcomes of 400nm pitch wafer-to-wafer (W2W) hybrid
bonding connections with a Cu/SiCN bonding interface. A new test vehicle is introduced and …

3D integration of dissimilar wafers through metal interconnect hybrid bonding has become
common practice in industry from CMOS image sensors to 3D NAND memory at >1μm …

3D architectures are increasingly making their way into commercial products such as image
sensors and 3D memory. While hybrid bonding exists today in wafer-to-wafer (W2W) format …

This study explored the fine pitch scalability of the die-to-die level vertical stacking through
the Cu/SiO 2 hybrid bonding technique for chips with varying Cu contact diameters (0.8-4 …

Copper to copper hybrid bonding is a key area of development for many devices. A major
focus of hybrid bonding development is reducing the size of the bond pads. The current …

In order to scale wafer-to-wafer hybrid bonding to sub-micrometer pitches, a tight control of
surface topography after CMP is required. The post CMP Cu pad recess with respect to the …

Multi-level back-end-of-line (BEOL) test vehicles have been produced to evaluate the
performance of the Tokyo Electron (TEL) wafer-to-wafer (W2W) bonding tool platform. The …

Wafer-to-wafer (W2W) hybrid bonding has gained more attention as the Artificial intelligence
(AI) and big data machine learning (ML) applications required higher interconnect densities …