In situ synthesis of Si3N4 in the Na2SiF6–N2 system via CVD: Kinetics and mechanism of solid-precursor decomposition

AL Leal-Cruz, MI Pech-Canul - Solid State Ionics, 2007 - Elsevier
The kinetics of decomposition of Na2SiF6 in nitrogen to in situ synthesize Si3N4 was
investigated. First, an optimization of the following parameters for the thermal decomposition …

In situ synthesis of Si3N4 from Na2SiF6 as a silicon solid precursor

AL Leal-Cruz, MI Pech-Canul - Materials chemistry and physics, 2006 - Elsevier
The aim of this investigation was to synthesize Si3N4 through the reaction of nitrogen with
SiF4 (g) produced during the thermal decomposition of sodium hexafluorosilicate (Na2SiF6) …

A low-temperature and seedless method for producing hydrogen-free Si3N4

AL Leal-Cruz, MI Pech-Canul… - Revista mexicana de …, 2008 - scielo.org.mx
A simple, seedless method for the synthesis of Si 3 N 4 from a hydrogen–free precursor
system (Na 2 SiF 6 (s)–N 2 (g)) was developed. From thermodynamic calculations and …

Mechanism and Parameters Controlling the Decomposition Kinetics of Na2SiF6 Powder to SiF4

N Soltani, MI Pech‐Canul, LA González… - … Journal of Chemical …, 2016 - Wiley Online Library
ABSTRACT Sodium hexafluorosilicate (Na2SiF6) powder has been used as a silicon source
for formation of Si3N4 coatings by the hybrid precursor system‐chemical vapor deposition …

A DIFFERENT CONSIDERATION FOR Na2SiF6 FORMATION/DISSOCIATION AND ITS RELATION WITH SILICON FLUORIDE VAPORIZATION IN THE …

AL Leal-Cruz, MI Pech-Canul… - Mineral Processing & …, 2008 - Taylor & Francis
Due to contamination and corrosion problems caused by silicon fluoride vaporization in
steelmaking plants, the formation/dissociation of Na2SiF6 has become the subject of many …

Effect of processing parameters on the deposition rate of Si3N4/Si2N2O by chemical vapor infiltration and the in situ thermal decomposition of Na2SiF6

MI Pech-Canul, JL De la Pena, AL Leal-Cruz - Applied Physics A, 2007 - Springer
Abstract Silicon nitride (Si 3 N 4) and oxynitride (Si 2 N 2 O) were deposited by chemical
vapor infiltration (CVI) through a novel route involving the in-situ thermal decomposition of …

Kinetics of formation and dissociation of Na2SiF6

Y Kashiwaya, AW Cramb - Metallurgical and Materials Transactions B, 2002 - Springer
Spontaneous fluoride emissions from high-temperature processes can result in an
increased atmospheric fluorine content and environmental contamination. Slags containing …

Effect of Oxygen Impurities and Synthesis Temperature on the Phase Composition of the Products of Self-Propagating High-Temperature Synthesis of Si3N4

VV Zakorzhevskii - Inorganic Materials, 2018 - Springer
It has been shown that raising the oxygen impurity concentration in starting mixture
components reduces the temperature of the α–β phase transition of silicon nitride. At oxygen …

Low‐Pressure Chemical Vapor Deposition of α‐Si3N4 from SiF4 and NH3: Kinetic Characteristics

WY Lee, JR Strife, RD Veltri - Journal of the American Ceramic …, 1992 - Wiley Online Library
Deposition of α‐Si3N4 from SiF4 and NH3 was systematically studied using an
axisymmetric, vertical hot‐wall reactor in the temperature range of 1340° to 1490° C. The …

Synthesis of highly disperse NbSi2–Si3N4 and Si3N4–NbN composite powders

R Lytvyn, I Kud, O Myslyvchenko… - … Journal of Applied …, 2024 - Wiley Online Library
The behavior of reaction powder mixtures of stoichiometric compositions calculated for the
synthesis of higher niobium nitride and silicide in the temperature range 800–1400° С in …