Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane
Despite heightened interest in 2D transition-metal dichalcogenide (TMD) doping methods
for future layered semiconductor devices, most doping research is currently limited to …
for future layered semiconductor devices, most doping research is currently limited to …
Versatile post-doping toward two-dimensional semiconductors
Y Murai, S Zhang, T Hotta, Z Liu, T Endo, H Shimizu… - ACS …, 2021 - ACS Publications
We have developed a simple and straightforward way to realize controlled postdoping
toward 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic …
toward 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic …
Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide
Reliable, controlled doping of 2D transition metal dichalcogenides will enable the realization
of next‐generation electronic, logic‐memory, and magnetic devices based on these …
of next‐generation electronic, logic‐memory, and magnetic devices based on these …
Electronic properties of a 1D intrinsic/p-doped heterojunction in a 2D transition metal dichalcogenide semiconductor
Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for
example, to understand doping in an atomically thin semiconductor. Here, we demonstrate …
example, to understand doping in an atomically thin semiconductor. Here, we demonstrate …
Controllable p‐Type Doping of 2D WSe2 via Vanadium Substitution
Scalable substitutional doping of 2D transition metal dichalcogenides is a prerequisite to
developing next‐generation logic and memory devices based on 2D materials. To date …
developing next‐generation logic and memory devices based on 2D materials. To date …
Universal p-type doping via lewis acid for 2D transition-metal dichalcogenides
Developing spatially controlled and universal p-type doping of transition-metal
dichalcogenides (TMDs) is critical for optoelectronics. Here, a facile and universal p-doping …
dichalcogenides (TMDs) is critical for optoelectronics. Here, a facile and universal p-doping …
Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation
Despite growing interest in doping two-dimensional (2D) transition metal dichalcogenides
(TMDs) for future layered semiconductor devices, controllability is currently limited to only …
(TMDs) for future layered semiconductor devices, controllability is currently limited to only …
Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide
T Das, S Youn, JE Seo, E Yang… - ACS Applied Materials & …, 2023 - ACS Publications
Achieving effective polarity control of n-and p-type transistors based on two-dimensional
(2D) materials is a critical challenge in the process of integrating transition metal …
(2D) materials is a critical challenge in the process of integrating transition metal …
Realizing large-scale, electronic-grade two-dimensional semiconductors
Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation
electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten …
electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten …
Boosting Monolayer Transition Metal Dichalcogenides Growth by Hydrogen-Free Ramping during Chemical Vapor Deposition
The controlled vapor-phase synthesis of two-dimensional (2D) transition metal
dichalcogenides (TMDs) is essential for functional applications. While chemical vapor …
dichalcogenides (TMDs) is essential for functional applications. While chemical vapor …