A low-voltage low-power K-band CMOS LNA using DC-current-path split technology

TP Wang - IEEE microwave and wireless components letters, 2010 - ieeexplore.ieee.org
A low-voltage low-power K-band low-noise amplifier (LNA) using 0.18 μm CMOS technology
is presented in this letter. By splitting the dc current paths, the supply voltage of the LNA is …

A low-power low-noise amplifier for K-band applications

YL Wei, SSH Hsu, JD Jin - IEEE Microwave and Wireless …, 2009 - ieeexplore.ieee.org
This study presents a high performance K-band low noise amplifier. By utilizing transformer
feedback at the input stage, an excellent noise figure (NF) of 4.3 dB is obtained at 22 GHz …

A fully integrated 5 GHz low-voltage LNA using forward body bias technology

CP Chang, JH Chen, YH Wang - IEEE Microwave and Wireless …, 2009 - ieeexplore.ieee.org
A fully integrated 5 GHz low-voltage and low-power low noise amplifier (LNA) using forward
body bias technology, implemented through a 0.18 mum RF CMOS technology, is …

Design of Low‐Power and High‐Gain CMOS LNA with Current‐Reused Topology

S Wang, WJ Lin - Microwave and Optical Technology Letters, 2013 - Wiley Online Library
This article presents the design of low‐power and high‐gain X‐band CMOS low‐noise
amplifier (LNA) using a current‐reused (CR) topology. The proposed LNA is equivalent to a …

A 0.5-V novel complementary current-reused CMOS LNA for 2.4 GHz medical application

R Dai, Y Zheng, J He, G Liu, W Kong, S Zou - Microelectronics journal, 2016 - Elsevier
Abstract A 0.5-V low noise amplifier (LNA) for 2.4 GHz medical application based on 0.18
μm CMOS process is presented in this paper. To achieve low noise and high gain with the …

Ultra-low-power cascaded CMOS LNA with positive feedback and bias optimization

MT Lai, HW Tsao - IEEE Transactions on Microwave Theory …, 2013 - ieeexplore.ieee.org
<? Pub Dtl=""?> A novel circuit topology for a CMOS low-noise amplifier (LNA) is presented
in this paper. By employing a positive feedback technique at the common-source transistor …

Ultra low voltage, ultra low power low noise amplifier for 2 GHz applications

GR Karimi, SB Sedaghat - AEU-International Journal of Electronics and …, 2012 - Elsevier
In this paper, a 0.29 V, 2GHz CMOS low noise amplifier (LNA) intended for ultra low voltage
and ultra low power applications is developed. The circuit is simulated in standard 0.18 μm …

Ka-band low noise amplifier using standard 0.18 µm CMOS technology

SH Yen, YS Lin - Electronics Letters, 2006 - IET
A low-power-consumption (26.93 mW) 32 GHz (Ka-band) low noise amplifier (LNA) using
standard 0.18 µm CMOS technology is reported. To achieve sufficient gain, this LNA is …

5.7 GHz low-power variable-gain LNA in 0.18 µm CMOS

YS Wang, LH Lu - Electronics Letters, 2005 - IET
A variable-gain low-noise amplifier (LNA) suitable for low-voltage and low‐power operation
is designed and implemented in a standard 0.18 µm CMOS technology. With a current …

A 18–33 GHz CMOS LNA with 26.7 dB peak gain and 2.8 dB minimum NF for K/Ka-band applications

J Luo, Y Shen, Y Peng, Q Cheng - AEU-International Journal of Electronics …, 2024 - Elsevier
Abstract In the paper, a 18–33 GHz wideband low noise amplifier (LNA) with a T-type
inductive network is proposed. The T-type inductive network generates two dominant poles …