Reconfigurable two-dimensional air-gap barristors

G Zhang, G Lu, X Li, Z Mei, L Liang, S Fan, Q Li… - ACS nano, 2023 - ACS Publications
Reconfigurable logic circuits implemented by two-dimensional (2D) ambipolar
semiconductors provide a prospective solution for the post-Moore era. It is still a challenge …

Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics

Z Ming, H Sun, H Wang, Z Sheng… - ACS Applied Materials …, 2024 - ACS Publications
The unique features of two-dimensional (2D) materials provide significant opportunities for
the development of transparent and flexible electronics. Recently, ambipolar 2D …

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

K Murali, M Dandu, S Das… - ACS applied materials & …, 2018 - ACS Publications
Backward diodes conduct more efficiently in the reverse bias than in the forward bias,
providing superior high-frequency response, temperature stability, radiation hardness, and …

Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations

Y Shingaya, A Zulkefli, T Iwasaki… - Advanced Electronic …, 2023 - Wiley Online Library
A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS2 and WSe2
heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the …

Doping-free complementary WSe2 circuit via van der Waals metal integration

L Kong, X Zhang, Q Tao, M Zhang, W Dang, Z Li… - Nature …, 2020 - nature.com
Abstract Two-dimensional (2D) semiconductors have attracted considerable attention for the
development of ultra-thin body transistors. However, the polarity control of 2D transistors and …

Logic Computing Field-Effect Transistors Based on a Monolayer WSe2 Homojunction for the Semi-adder and Decoder

X Li, Z Wang, X Tang, P Yuan, L Li, C Shen, Y Jiang… - Nano Letters, 2024 - ACS Publications
Two-dimensional reconfigurable field-effect transistors (FETs) are promising candidates for
next-generation computing hardware. However, exploring the cascade design of FETs for …

Analog Circuit Applications Based on All‐2D Ambipolar ReSe2 Field‐Effect Transistors

KC Lee, SH Yang, YS Sung, YM Chang… - Advanced Functional …, 2019 - Wiley Online Library
Complementary circuits based on 2D materials show great promise for next‐generation
electronics. An ambipolar all‐2D ReSe2 field‐effect transistor (FET) with a hexagonal boron …

Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits

S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai… - ACS …, 2017 - ACS Publications
Transition metal dichalcogenides are of interest for next generation switches, but the lack of
low resistance electron and hole contacts in the same material has hindered the …

Realization of High Current Gain for Van der Waals MoS2/WSe2/MoS2 Bipolar Junction Transistor

Z Yan, N Xu, S Deng - Nanomaterials, 2024 - mdpi.com
Two-dimensional (2D) materials have attracted great attention in the past few years and offer
new opportunities for the development of high-performance and multifunctional bipolar …

Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors

GV Resta, Y Balaji, D Lin, IP Radu, F Catthoor… - ACS …, 2018 - ACS Publications
Atomically thin two-dimensional (2D) materials belonging to transition metal
dichalcogenides, due to their physical and electrical properties, are an exceptional vector for …