A 3–8 GHz low-noise CMOS amplifier
A Meaamar, BC Chye, YK Seng - IEEE Microwave and …, 2009 - ieeexplore.ieee.org
A wideband CMOS low-noise amplifier (LNA) is proposed by using the concept of mutual
coupling technique implemented through a symmetric center-tap inductor. A frequency …
coupling technique implemented through a symmetric center-tap inductor. A frequency …
A 0.5–11 GHz CMOS low noise amplifier using dual-channel shunt technique
QT Lai, JF Mao - IEEE microwave and wireless components …, 2010 - ieeexplore.ieee.org
A 0.5-11 GHz CMOS low noise amplifier (LNA) is proposed, with a new dual-channel shunt
technique implemented, where one channel uses inductive-series peaking to provide flat …
technique implemented, where one channel uses inductive-series peaking to provide flat …
A 60 GHz broadband low-noise amplifier with variable-gain control in 65 nm CMOS
YK Hsieh, JL Kuo, H Wang… - IEEE microwave and …, 2011 - ieeexplore.ieee.org
A 60 GHz low-noise amplifier (LNA) implemented in a 65 nm CMOS process is presented.
Due to the use of a gain-boosted input stage and binary controlled attenuators, the LNA …
Due to the use of a gain-boosted input stage and binary controlled attenuators, the LNA …
A 75.5-to-120.5-GHz, high-gain CMOS low-noise amplifier
DR Lu, YC Hsu, JC Kao, JJ Kuo… - 2012 IEEE/MTT-S …, 2012 - ieeexplore.ieee.org
In this paper, a high-gain and wideband low-noise amplifier using 65-nm CMOS process is
proposed. A four-stage cascode configuration is adopted to achieve the high gain and …
proposed. A four-stage cascode configuration is adopted to achieve the high gain and …
68–110-GHz-band low-noise amplifier using current reuse topology
M Sato, T Takahashi, T Hirose - IEEE Transactions on …, 2010 - ieeexplore.ieee.org
This paper proposes a new topology for a broadband low-noise-amplifier (LNA). A common-
gate (CG) amplifier with a matching inductor composes a unit cell, and the unit cells are …
gate (CG) amplifier with a matching inductor composes a unit cell, and the unit cells are …
A W-band CMOS low power wideband low noise amplifier with 22 dB gain and 3dB bandwidth of 20 GHz
CJ Lee, HJ Lee, JG Lee, TH Jang… - 2015 Asia-Pacific …, 2015 - ieeexplore.ieee.org
This paper presents a W-band low power, wideband low noise amplifier design in 65nm
CMOS. Low noise amplifier consists of six-stage to obtain high gain. For a high-data rate …
CMOS. Low noise amplifier consists of six-stage to obtain high gain. For a high-data rate …
A compact 2.1–39 GHz self-biased low-noise amplifier in 65 nm CMOS technology
A compact self-biased wideband low noise amplifier (LNA) is realized in Global Foundries
65 nm CMOS technology. Wideband input matching characteristic is achieved by placing a …
65 nm CMOS technology. Wideband input matching characteristic is achieved by placing a …
An Ultra-Wide-Band 0.4–10-GHz LNA in 0.18-m CMOS
KH Chen, JH Lu, BJ Chen, SI Liu - IEEE Transactions on …, 2007 - ieeexplore.ieee.org
A two-stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. With the
common-gate configuration employed as the input stage, the broad-band input matching is …
common-gate configuration employed as the input stage, the broad-band input matching is …
Design of 3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current reuse technique
Q Wan, C Wang - AEU-International Journal of Electronics and …, 2011 - Elsevier
A new low complexity ultra-wideband 3.1–10.6 GHz low noise amplifier (LNA), designed in a
chartered 0.18 μm RFCMOS technology, is presented in this paper. The ultra-wideband LNA …
chartered 0.18 μm RFCMOS technology, is presented in this paper. The ultra-wideband LNA …
A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier
This letter presents a fully integrated 2.4/5.2-GHz dual-band low-noise amplifier (LNA) for
WLAN applications. By switching the input transconductance and the output capacitance …
WLAN applications. By switching the input transconductance and the output capacitance …