8 mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application
A 17/24 GHz dual-band CMOS low-noise amplifier (LNA) for ISM-band application is
presented. The proposed LNA employs a positive feedback transmission-line-based LC …
presented. The proposed LNA employs a positive feedback transmission-line-based LC …
A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier
This letter presents a fully integrated 2.4/5.2-GHz dual-band low-noise amplifier (LNA) for
WLAN applications. By switching the input transconductance and the output capacitance …
WLAN applications. By switching the input transconductance and the output capacitance …
A power efficient differential 20-GHz low noise amplifier with 5.3-GHz 3-dB bandwidth
X Guo, O KK - IEEE microwave and wireless components …, 2005 - ieeexplore.ieee.org
A 20-GHz differential two-stage low-noise amplifier (LNA) is demonstrated in a foundry
digital 130-nm CMOS technology with 8-metal layers. This LNA has 20-dB voltage gain …
digital 130-nm CMOS technology with 8-metal layers. This LNA has 20-dB voltage gain …
A sub-2 db nf dual-band cmos lna for cdma/wcdma applications
This letter presents the design and experimental results of a 1.8/2.14 GHz dual-band CMOS
low-noise amplifier (LNA), which is usable for code division multiple access and wideband …
low-noise amplifier (LNA), which is usable for code division multiple access and wideband …
A 7-GHz 1.8-dB NF CMOS low-noise amplifier
R Fujimoto, K Kojima, S Otaka - IEEE journal of solid-state …, 2002 - ieeexplore.ieee.org
A 7-GHz low-noise amplifier (LNA) was designed and fabricated using 0.25-/spl mu/m
CMOS technology. A cascode configuration with a dual-gate MOSFET and shielded pads …
CMOS technology. A cascode configuration with a dual-gate MOSFET and shielded pads …
A 28-/39-GHz dual-band CMOS LNA with shunt-series transformer feedback
J Liu, S Liu, Y Gao, X Liu, Z Zhu - IEEE Microwave and Wireless …, 2022 - ieeexplore.ieee.org
This letter presents a concurrent dual-band low-noise amplifier (LNA) operating at 28 and 39
GHz for multiband 5G wireless systems. In order to achieve a wideband input power …
GHz for multiband 5G wireless systems. In order to achieve a wideband input power …
A low‐power V‐band CMOS low‐noise amplifier using current‐sharing technique
HY Yang, YS Lin, C Chen Chen - Microwave and Optical …, 2008 - Wiley Online Library
Abstract A low‐power‐consumption 53‐GHz (V‐band) low‐noise amplifier (LNA) using
standard 0.13 μm CMOS technology is reported. To achieve sufficient gain, this LNA is …
standard 0.13 μm CMOS technology is reported. To achieve sufficient gain, this LNA is …
A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology
A 24-GHz low-noise amplifier (LNA) was designed and fabricated in a standard 0.18-μm
CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum …
CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum …
A fully integrated 5 GHz low-voltage LNA using forward body bias technology
CP Chang, JH Chen, YH Wang - IEEE Microwave and Wireless …, 2009 - ieeexplore.ieee.org
A fully integrated 5 GHz low-voltage and low-power low noise amplifier (LNA) using forward
body bias technology, implemented through a 0.18 mum RF CMOS technology, is …
body bias technology, implemented through a 0.18 mum RF CMOS technology, is …