24 GHz low-noise amplifier in 0.18 µm CMOS technology
KW Yu, YL Lu, D Huang, DC Chang, V Liang… - Electronics letters, 2003 - IET
A 24 GHz monolithic low-noise amplifier (LNA) is implemented in a standard 0.18 µm CMOS
technology. Measurements show a gain of 12.86 dB and a noise figure of 5.6 dB at 23.5 …
technology. Measurements show a gain of 12.86 dB and a noise figure of 5.6 dB at 23.5 …
A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology
A 24-GHz low-noise amplifier (LNA) was designed and fabricated in a standard 0.18-μm
CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum …
CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum …
A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF-CMOS
L Aspemyr, H Jacobsson, M Bao… - Digest of Papers …, 2006 - ieeexplore.ieee.org
The design and measured performance of two low-noise amplifiers at 15 GHz and 20 GHz
realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA …
realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA …
A 26 GHz low-noise amplifier in 0.18/spl mu/m CMOS technology
KW Yu, LU Yin-Lung, D Huang… - The 11th IEEE …, 2003 - ieeexplore.ieee.org
A 26 GHz monolithic low-noise amplifier (LNA) is implemented in a standard 0.18/spl mu/m
CMOS technology. Measurements show a gain of 8.9 dB at the peak gain frequency of 25.7 …
CMOS technology. Measurements show a gain of 8.9 dB at the peak gain frequency of 25.7 …
A 7-GHz 1.8-dB NF CMOS low-noise amplifier
R Fujimoto, K Kojima, S Otaka - IEEE journal of solid-state …, 2002 - ieeexplore.ieee.org
A 7-GHz low-noise amplifier (LNA) was designed and fabricated using 0.25-/spl mu/m
CMOS technology. A cascode configuration with a dual-gate MOSFET and shielded pads …
CMOS technology. A cascode configuration with a dual-gate MOSFET and shielded pads …
13 GHz 4.67 dB NF CMOS low-noise amplifier
The design and measured results of a fully-integrated 13 GHz CMOS low-noise amplifier
(LNA) are presented. Effects of substrate resis-tances on LNA performance are discussed …
(LNA) are presented. Effects of substrate resis-tances on LNA performance are discussed …
80 GHz low noise amplifiers in 65nm CMOS SOI
B Martineau, A Cathelin, F Danneville… - ESSCIRC 2007-33rd …, 2007 - ieeexplore.ieee.org
A 1 stage and 3 stages 80 GHz low noise amplifiers (LNA) are presented in this paper. Both
mm-wave LNA are integrated in a 65 nm CMOS SOI process. The one stage amplifier …
mm-wave LNA are integrated in a 65 nm CMOS SOI process. The one stage amplifier …
A 1.8 GHz CMOS low-noise amplifier
CJ Debono, F Maloberti… - ICECS 2001. 8th IEEE …, 2001 - ieeexplore.ieee.org
A 1.8 GHz CMOS low-noise amplifier Page 1 A 1.8 GHz CMOS Low-Noise Amplifier Carl
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
22 GHz amplifier using a 0.12 μm CMOS technology
D Pienkowski, G Boeck - 2006 International Conference on …, 2006 - ieeexplore.ieee.org
A 22 GHz low-noise amplifier (LNA) was designed, fabricated in standard 0.12 μm CMOS
technology and measured. The LNA chip achieves a maximum gain of 5.5 dB, a noise figure …
technology and measured. The LNA chip achieves a maximum gain of 5.5 dB, a noise figure …
6.5 mW CMOS low noise amplifier at 1.9 GHz
S Yang, R Mason, C Plett - 1999 IEEE International …, 1999 - ieeexplore.ieee.org
A 1.9 GHz low noise amplifier has been designed in a standard CMOS. 35 micron process.
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …