6.5 mW CMOS low noise amplifier at 1.9 GHz
S Yang, R Mason, C Plett - 1999 IEEE International …, 1999 - ieeexplore.ieee.org
A 1.9 GHz low noise amplifier has been designed in a standard CMOS. 35 micron process.
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …
A 1.8 GHz CMOS low-noise amplifier
CJ Debono, F Maloberti… - ICECS 2001. 8th IEEE …, 2001 - ieeexplore.ieee.org
A 1.8 GHz CMOS low-noise amplifier Page 1 A 1.8 GHz CMOS Low-Noise Amplifier Carl
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
A 1.5-V, 2.4 GHz CMOS low-noise amplifier
A 2.4 GHz low noise amplifier has been designed in a standard CMOS 0.35 um process.
The transistor model is Bsim3 for 0.35 um process. The amplifier provides a forward gain of …
The transistor model is Bsim3 for 0.35 um process. The amplifier provides a forward gain of …
30 GHz CMOS low noise amplifier
E Adabi, B Heydari, M Bohsali… - 2007 IEEE Radio …, 2007 - ieeexplore.ieee.org
30 GHz low noise amplifier was designed and fabricated in a 90nm digital CMOS process.
The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 …
The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 …
A 1. 5 GHz CMOS Low Noise Amplifier
R Fujimoto, S Otaka, H Iwai… - IEICE transactions on …, 1998 - search.ieice.org
A 1. 5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS
technology. The measured associated gain (G a) of the LNA is 13. 8 dB, the minimum noise …
technology. The measured associated gain (G a) of the LNA is 13. 8 dB, the minimum noise …
2.4 GHz high gain low power narrowband low-noise amplifier (LNA) in 0.18/spl mu/m TSMC CMOS
E Kunz, S Parke - 2004 IEEE Workshop on Microelectronics …, 2004 - ieeexplore.ieee.org
A 2.4 GHz low-noise amplifier has been designed in a standard CMOS 0.18 TSMC process.
The measured noise factor and gain are 1.65 dB and 51dB, respectively, at 2.4 GHz. The …
The measured noise factor and gain are 1.65 dB and 51dB, respectively, at 2.4 GHz. The …
Design of a 6GHz high-gain low noise amplifier
X Tang, F Huang, D Zhao - 2012 international conference on …, 2012 - ieeexplore.ieee.org
This paper presents the design of a low noise amplifier in 0.13-μm CMOS technology. The
conventional inductive degeneration is applied to reduce the noise figure. The amplifying …
conventional inductive degeneration is applied to reduce the noise figure. The amplifying …
A 5.2 GHz low-voltage low-noise amplifier with 0.35 μm CMOS technology
WR Liou*, CA Tsai, ML Yeh, GE Jan - International journal of …, 2004 - Taylor & Francis
A low-voltage CMOS low-noise amplifier (LNA) architecture is presented. We have used a
TSMC 0.35 µm CMOS high-frequency model to design a fully integrated 1 V, 5.2 GHz two …
TSMC 0.35 µm CMOS high-frequency model to design a fully integrated 1 V, 5.2 GHz two …
A New 2.4 GHz CMOS Low-Noise Amplifier with Automatic Gain Control
A Tang, F Yuan, E Law - 2006 49th IEEE International Midwest …, 2006 - ieeexplore.ieee.org
A new 2.4 GHz CMOS low-noise amplifier with automatic gain control that provides an
enhanced dynamic range of up to 40 dB over conventional low-noise amplifiers is proposed …
enhanced dynamic range of up to 40 dB over conventional low-noise amplifiers is proposed …
13 GHz 4.67 dB NF CMOS low-noise amplifier
The design and measured results of a fully-integrated 13 GHz CMOS low-noise amplifier
(LNA) are presented. Effects of substrate resis-tances on LNA performance are discussed …
(LNA) are presented. Effects of substrate resis-tances on LNA performance are discussed …