Although selective dry etches exist for GaN, it is difficult to selectively etch AlN in
heterostructures with other conventional III-N epitaxial materials. The reduction in etch rate …

The etch rates and feature anisotropy for GaN, AlN, and InN etched in Cl/sub 2/-Ar plasmas
with four different techniques were examined. Conventional reactive ion etching produces …

Varying atomic ratios in compound semiconductors is well known to have large effects on
the etching properties of the material. The use of thin device barrier layers, down to 25 nm …

Gallium nitride/aluminium gallium nitride (GaN/AlGaN) etching in BCl 3/Cl 2-based
inductively coupled plasma (ICP) is investigated for high electron mobility transistor (HEMT) …

The selective etch characteristics of GaN, Al x Ga 1− x N, and In x Ga 1− x N have been
examined in an inductively coupled plasma reactor using Cl 2/Ar/O 2 as the etchant gas …

Highly selective, low-damage etching of GaN over AlGaN is realized by zero-bias, nitrogen-
rich N 2∕ Cl 2∕ O 2 inductively coupled plasma, affording sub-10‐nm∕ min etch rates and …

We have investigated an inductively coupled plasma etching recipe using SiCl 4 and SF 6
with a resulting selectivity> 10 for GaN in respect to InAlN. The formation of an etch-resistant …

We report the nonselective plasma etching of epitaxial GaN: Mg, Al 0.63 Ga 0.37 N⁠, and Al
N∕ Al 0.08 Ga 0.92 N short-period superlattices with various doping properties. Etching is …

High-density plasma etching has been an effective patterning technique for the group-III
nitrides due to ion fluxes which are 2–4 orders of magnitude higher than more conventional …

Inductively coupled plasma (ICP) etching of GaN with high selectivity over Al. 22 Ga. 78 N in
BCl 3/SF 6 mixtures has been studied. Selectivity and surface morphology were investigated …