Effective control of 2D transistors polarity is a critical challenge in the process for integrating
2D materials into semiconductor devices. Herein, a doping‐free approach for developing …

Abstract Two-dimensional (2D) semiconductors have attracted considerable attention for the
development of ultra-thin body transistors. However, the polarity control of 2D transistors and …

Achieving effective polarity control of n-and p-type transistors based on two-dimensional
(2D) materials is a critical challenge in the process of integrating transition metal …

Precise control over the polarity of transistors is a key necessity for the construction of
complementary metal–oxide–semiconductor circuits. However, the polarity control of 2D …

Two-dimensional (2D) SnSe is a very promising material for semiconducting devices due to
its novel properties. However, the contact behavior between a 2D SnSe sheet and a three …

As demand for higher integration density and smaller devices grows, silicon‐based
complementary metal‐oxide‐semiconductor (CMOS) devices will soon reach their ultimate …

The applications of any two-dimensional (2D) semiconductor devices cannot bypass the
control of metal-semiconductor interfaces, which can be severely affected by complex Fermi …

The van der Waals (vdW) strategy is promising for overcoming the Fermi pinning challenge
in two-dimensional (2D) transistors. However, the lack of advanced-node lithography …

The potential of 2D materials in future CMOS technology is hindered by the lack of high-
performance p-type field effect transistors (p-FETs). While utilization of the top-gate (TG) …

Two-dimensional semiconductors have a number of valuable properties that could be used
to create novel electronic devices. However, creating 2D devices with good contacts and …