Graphene and hexagonal boron nitride (h-BN) have similar crystal structures with a lattice
constant difference of only 2%. However, graphene is a zero-bandgap semiconductor with …

Graphene (G) and atomic layers of hexagonal boron nitride (h-BN) are complementary two-
dimensional materials, structurally very similar but with vastly different electronic properties …

Two-dimensional materials, such as graphene and monolayer hexagonal BN (h-BN), are
attractive for demonstrating fundamental physics in materials and potential applications in …

Graphene–boron nitride monolayer heterostructures contain adjacent electrically active and
insulating regions in a continuous, single-atom thick layer. To date structures were grown at …

Multilayer hexagonal boron nitride (hBN) can be used to preserve the intrinsic physical
properties of other two-dimensional materials in device structures. However, integrating the …

Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) have
attracted significant attention due to their remarkable properties. Numerous interesting …

Graphene and hexagonal boron nitride are typical conductor and insulator, respectively,
while their hybrids hexagonal boron carbonitride are promising as a semiconductor. Here …

Graphene/hexagonal boron nitride (h-BN) vertical heterostructures have recently revealed
unusual physical properties and new phenomena, such as commensurate–incommensurate …

By adapting the concept of epitaxy to two-dimensional space, we show the growth of a
single-atomic-layer, in-plane heterostructure of a prototypical material system—graphene …

In-plane and vertically stacked heterostructures of graphene and hexagonal boron nitride (h-
BN-G and G/h-BN, respectively) are both recent focuses of graphene research. However …