Inductorless CMOS low noise amplifier for multiband application in 0.1–1.2 GHz

G Qin, M Jin, G Tu, Y Yan, L Yang, Y Xu… - Transactions of Tianjin …, 2017 - Springer
A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was
designed and implemented in this paper. Current-reuse and self-bias techniques were used …

Low-voltage low-power CMOS RF low noise amplifier

MK Salama, AM Soliman - AEU-International Journal of Electronics and …, 2009 - Elsevier
In this paper, a 1V, 2GHz CMOS low-noise amplifier (LNA) was developed intended for use
in the front-end receiver. The circuit is simulated in standard 0.25 μm CMOS MOSIS. The …

A 0.3–1.4 GHz inductorless CMOS variable gain LNA based on the inverter cell and self-forward-body-bias technique

F Soleymani, Y Bastan, P Amiri, MH Maghami - AEU-International Journal …, 2020 - Elsevier
In this paper, a low noise amplifier with variable gain is proposed in the frequency range of
0.3–1.4 GHz. The proposed circuit is composed of two inverter cell stages in which a …

An enhanced low noise amplifier circuit at 6 GHz center frequency and NF improvement in 180 nm CMOS process

F Azizi, G Yosefi - Wireless Personal Communications, 2021 - Springer
This paper presents the design and simulation of a modified CMOS low noise amplifier
(LNA) circuit in 180 nm CMOS standard technology. We modified a cascade LNA using π …

A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18 μm CMOS

K Bao, X Fan, W Li, L Zhang… - Journal of Semiconductors, 2012 - iopscience.iop.org
This paper presents a wideband low noise amplifier (LNA) for multi-standard radio
applications. The low noise characteristic is achieved by the noise-canceling technique …

A 0.5–11 GHz CMOS low noise amplifier using dual-channel shunt technique

QT Lai, JF Mao - IEEE microwave and wireless components …, 2010 - ieeexplore.ieee.org
A 0.5-11 GHz CMOS low noise amplifier (LNA) is proposed, with a new dual-channel shunt
technique implemented, where one channel uses inductive-series peaking to provide flat …

A CMOS 3.5 GHz Bandwidth Low Noise Amplifier using Active Inductor

SV Mir-Moghtadaei, F Shirani Bidabadi - AUT Journal of Electrical …, 2025 - eej.aut.ac.ir
This paper presents a 3.5 GHz bandwidth wideband low noise amplifier (LNA) with low
power consumption, high power gain, and acceptable linearity in 130 nm CMOS technology …

A differential multi-band CMOS low noise amplifier with noise cancellation and interference rejection

YS Hwang, SF Wang, JJ Chen - AEU-International Journal of Electronics …, 2010 - Elsevier
In this paper, a differential multi-band CMOS low noise amplifier (LNA), operated in a wide
range from 1350 to 2900MHz, with input matching device, noise cancellation and …

A Low Power V-band Low Noise Amplifier Using 0.13-μm CMOS Technology

CY Wu, PH Chen - 2007 14th IEEE International Conference on …, 2007 - ieeexplore.ieee.org
In this paper, a low power V-band low-noise amplifier (LNA) using standard 0.13-um CMOS
technology is proposed and analyzed. In the proposed LNA, three-stage common-source …

A fully integrated low voltage (0.5 V) X‐band CMOS low noise amplifier

B Liu, J Zhou, J Mao - Microwave and Optical Technology …, 2011 - Wiley Online Library
Abstract In this article, a 0.5 VX‐band low noise amplifier (LNA) composed of two common‐
source stages is designed and fabricated with 0.18 um CMOS technology. Based on the …