Highly Oriented WS2 Monolayers for High‐Performance Electronics

L Zhan, X Pei, J Tang, S Li, S Li, Y Li, L Li, C Wan… - Advanced … - Wiley Online Library
Abstract 2D transition‐metal dichalcogenide (TMDC) semiconductors represent the most
promising channel materials for post‐silicon microelectronics due to their unique structure …

High-Performance WS2 MOSFETs with Bilayer WS2 Contacts

L Jin, J Wen, M Odlyzko, N Seaton, R Li… - ACS …, 2024 - ACS Publications
WS2 is a promising transition-metal dichalcogenide (TMDC) for use as a channel material in
extreme-scaled metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its …

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

J Chen, K Shao, W Yang, W Tang, J Zhou… - … applied materials & …, 2019 - ACS Publications
Two-dimensional transition-metal dichalcogenides (TMDCs) possess unique electronic and
optical properties, which open up a new opportunity for atomically thin optoelectronic …

Toward the growth of high mobility 2D transition metal dichalcogenide semiconductors

H Li, JK Huang, Y Shi, LJ Li - Advanced Materials Interfaces, 2019 - Wiley Online Library
The development of integrated circuits greatly relies on the continuous dimension
downscaling in material size and thickness. However, the miniaturization of silicon‐based …

Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors

X Shi, X Li, Q Guo, M Zeng, X Wang, Y Wu - Applied Physics Reviews, 2023 - pubs.aip.org
Two-dimensional transition metal dichalcogenides (TMDs) are potential candidates for next
generation channel materials owing to their atomically thin structure and high carrier …

Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport

F Zhang, Y Lu, DS Schulman, T Zhang, K Fujisawa… - Science …, 2019 - science.org
Chemical doping constitutes an effective route to alter the electronic, chemical, and optical
properties of two-dimensional transition metal dichalcogenides (2D-TMDs). We used a …

Optimized electrical properties of p-type field-effect transistors based on WSe2 grown at moderate temperatures

X Wang, X Xiong, X Shi, C Gu, Y Wu - Applied Physics Letters, 2023 - pubs.aip.org
Two-dimensional transition-metal dichalcogenides (TMDCs) have been pursued for high-
performance logic electronic devices, and compatibility with silicon complementary metal …

Remote epitaxy of single-crystal rhombohedral WS2 bilayers

C Chang, X Zhang, W Li, Q Guo, Z Feng… - Nature …, 2024 - nature.com
Compared to transition metal dichalcogenide (TMD) monolayers, rhombohedral-stacked (R-
stacked) TMD bilayers exhibit remarkable electrical performance, enhanced nonlinear …

Realizing large-scale, electronic-grade two-dimensional semiconductors

YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang… - ACS …, 2018 - ACS Publications
Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation
electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten …

Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire

M Chubarov, TH Choudhury, DR Hickey, S Bachu… - ACS …, 2021 - ACS Publications
Realization of wafer-scale single-crystal films of transition metal dichalcogenides (TMDs)
such as WS2 requires epitaxial growth and coalescence of oriented domains to form a …