Lateral heterojunctions within monolayer h-BN/graphene: a first-principles study

Q Sun, Y Dai, Y Ma, W Wei, B Huang - RSC Advances, 2015 - pubs.rsc.org
Very recently, the lateral heterojunctions of hexagonal boron nitride (h-BN)/graphene were
experimentally realized for the time. To study the related properties of such heterojunctions …

Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures

D Zhang, DB Zhang, F Yang, HQ Lin, H Xu… - 2D Materials, 2015 - iopscience.iop.org
Heterostructures are often expected to be of enhanced electronic properties compared with
homogeneous ones. Valuable experimental efforts have been devoted to the fabrication of …

Tunable electronic structures of graphene/boron nitride heterobilayers

Y Fan, M Zhao, Z Wang, X Zhang, H Zhang - Applied Physics Letters, 2011 - pubs.aip.org
Using first-principles calculations, we show that the band gap and electron effective mass
(EEM) of graphene/boron nitride heterobilayers (C/BN HBLs) can be modulated effectively …

Hexagonal boron nitride–graphene heterostructures: Synthesis and interfacial properties

Q Li, M Liu, Y Zhang, Z Liu - Small, 2016 - Wiley Online Library
Research on in‐plane and vertically‐stacked heterostructures of graphene and hexagonal
boron nitride (h‐BN) have attracted intense attentions for energy band engineering and …

Modification of the electronic properties of hexagonal boron-nitride in BN/graphene vertical heterostructures

M Pan, L Liang, W Lin, SM Kim, Q Li, J Kong… - 2D …, 2016 - iopscience.iop.org
Van der Waals (vdW) heterostructures consist of isolated atomic planar structures,
assembled layer-by-layer into desired structures in a well-defined sequence. Graphene …

Postsynthesis of h‐BN/Graphene Heterostructures Inside a STEM

Z Liu, LHG Tizei, Y Sato, YC Lin, CH Yeh, PW Chiu… - Small, 2016 - Wiley Online Library
Combinations of 2D materials with different physical properties can form heterostructures
with modified electrical, mechanical, magnetic, and optical properties. The direct observation …

Effective Zeeman splitting in bent lateral heterojunctions of graphene and hexagonal boron nitride: a new mechanism towards half-metallicity

L Yue, G Seifert, K Chang, DB Zhang - Physical Review B, 2017 - APS
Low-dimensional half-metallic (HM) systems are invaluable for future spintronics. Yet a
definitive experimental demonstration of HM characteristic in two-dimensional (2D) materials …

Structural and electronic properties of interfaces in graphene and hexagonal boron nitride lateral heterostructures

J Zhang, W Xie, X Xu, S Zhang, J Zhao - Chemistry of Materials, 2016 - ACS Publications
The in-plane heterostructures composed of graphene and hexagonal boron nitride (G/BN),
as the first kind of two-dimensional metal/semiconductor heterostructures of one-atom …

Electronic structure and scanning tunneling microscopy images of heterostructures consisting of graphene and carbon-doped hexagonal boron nitride layers

T Haga, Y Fujimoto, S Saito - Physical Review B, 2019 - APS
We perform first-principles total-energy calculations within the framework of the density-
functional theory to investigate electronic properties of graphene/C-doped hexagonal boron …

Enhanced half-metallicity in orientationally misaligned graphene/hexagonal boron nitride lateral heterojunctions

J Zeng, W Chen, P Cui, DB Zhang, Z Zhang - Physical Review B, 2016 - APS
The ever increasing level of control in the fabrication of graphene/hexagonal boron nitride (h-
BN) lateral heterostructures makes it promising for material realization of exotic electronic …